FDMC15N06 PDF даташит

Спецификация FDMC15N06 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMC15N06
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

8 Pages

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FDMC15N06

N-Channel MOSFET

55V, 15A, 0.090Ω

Features

• RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A

• 100% Avalanche Tested

• RoHS Compliant

July 2009

Description

These N-Channel power MOSFETs are manufactured using the

innovative UItraFET process. This advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance.This device is capable of

withstanding high energy in the avalanche mode and the diode

exhibits very low reverse recovery time and stored charge. It was

designed for use in applications where power efficiency is

important, such as switching regulators, switching converters,

motor drivers, relay drivers, lowvoltage bus switches, and power

management in portable and battery-operated products.

Top Bottom

Pin 1

S SG

MLP 3.3x3.3

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol

www.DataShVeDeStS4U.com

VGSS

IDM

EAS

IAR

EAR

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Continuous (TA = 25oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation

(TC = 25oC)

(TA = 25oC)

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

(Note 1a)

(Note 2)

(Note 3)

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1a)

Ratings

±20

2.4

3.5

2.3

-55 to +150

300

Ratings

3.5

Units

oC/W

FDMC15N06 Rev. A

www.fairchildsemi.com

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Package Marking and Ordering Information

Device Marking

FDMC15N06

Device

FDMC15N06

Package

Power 33

Reel Size

13"

Tape Width

12mm

Quantity

3000 units

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TC = 25oC

ID = 250µA, Referenced to 25oC

VDS = 50V, VGS = 0V

VDS = 45V, TC = 150oC

VGS = ±20V, VDS = 0V

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250µA

VGS = 10V, ID = 15A

VDS = 20V, ID = 15A

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Qgd Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 30V,ID = 15A

VGS = 10V

(Note 4)

Min.

2.0

Typ.

0.75

265

8.8

1.7

3.6

Max. Units

250

±100

V/oC

µA

4.0 V

0.90 Ω

-S

350 pF

130 pF

42 pF

11.5 nC

- nC

Switching Characteristics

td(on)

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 30V, ID = 15A

RG = 25Ω

(Note 4)

9.5 29 ns

36.5 83 ns

22.5 55 ns

22 54 ns

www.DataSDhreaeti4nU-S.coomurce Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

- - 15 A

ISM Maximum Pulsed Drain to Source Diode Forward Current

- - 60 A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 15A

- - 1.25 V

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 15A

- 30 - ns

dIF/dt = 100A/µs

(Note 5)

- nC

Notes:

1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

2: Repetitive Rating: Pulse width limited by maximum junction temperature

3: L = 1mH, IAS = 8.5A, RG = 25Ω, Starting TJ = 25°C

4: Essentially Independent of Operating Temperature Typical Characteristics

5: ISD ≤ 15A, di/dt ≤ 200A/µs, VDD ≤ 40V, Starting TJ = 25°C

FDMC15N06 Rev. A

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

VGS = 20 V

15 V

10 V

10 5 V

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

0.1 1 5

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

0.25

0.20

0.15

0.10

0.05

VGS = 10V

VGS = 20V

www.DataSheet4U0.c.0o0m

*Note: TC = 25oC

10 20 30

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

800

600

Coss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

400 Ciss

*Note:

1. VGS = 0V

2. f = 1MHz

200 Crss

0.1 1 10

VDS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

150oC

25oC

-55oC

*Notes:

1. VDS = 20V

2. 250µs Pulse Test

2345678

VGS, Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

100

150oC

25oC

*Notes:

1. VGS = 0V

1 2. 250µs Pulse Test

0.0 0.5 1.0 1.5 2.0

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 11V

VDS = 30V

8 VDS = 44V

0 *Note: ID = 15A

0 2 4 6 8 10 12

Qg, Total Gate Charge [nC]

FDMC15N06 Rev. A

3 www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDMC15N06	N-Channel MOSFET	Fairchild Semiconductor

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