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FDMA3023PZ PDF даташит
| Спецификация FDMA3023PZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMA3023PZ |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
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FDMA3023PZ
Dual P-Channel PowerTrench® MOSFET
-30 V, -2.9 A, 90 mΩ
December 2008
tm
Features
General Description
Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1.0 A
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
HBM ESD protection level > 2 kV (Note 3)
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1 D2
D1 D2
D1 G2 S2
MicroFET 2x2
S1 11
G1 22
D2 33
66 D1
55 G2
44 S2
www.DataSMheeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-30
±8
-2.9
-6
1.4
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
151
°C/W
Device Marking
323
Device
FDMA3023PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 µA, VGS = 0 V
ID = -250 µA, referenced to 25 °C
VDS = -24 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-30 V
-24 mV/°C
-1
±100
µA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
-0.4 -0.6 -1.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
3 mV/°C
VGS = -4.5 V, ID = -2.9 A
71 90
VGS = -2.5 V, ID = -2.6 A
97 130
rDS(on)
Static Drain to Source On Resistance VGS = -1.8 V, ID = -1.7 A
122 170 mΩ
VGS = -1.5 V, ID = -1.0 A
151 240
VGS = -4.5 V, ID = -2.9 A, TJ = 125 °C
110 140
gFS Forward Transconductance
VDS = -5 V, ID = -2.9 A
10 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1 MHz
400 530
55 70
45 65
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15 V, ID = -1.0 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -15 V, ID = -2.9 A
VGS = -4.5 V
5 10 ns
4 10 ns
62 100 ns
18 33 ns
7.9 11 nC
0.9 nC
1.9 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.1 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -2.9 A, di/dt = 100 A/µs
-1.1
-0.8 -1.2
18 33
6.6 13
A
V
ns
nC
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
2
www.fairchildsemi.com
No Preview Available ! |
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.DataSheet4U.com
©2008 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B1
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDMA3023PZ | N-Channel MOSFET | Fairchild Semiconductor |
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