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FDL100N50F PDF даташит
| Спецификация FDL100N50F изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDL100N50F |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
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FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055Ω
Features
• RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A
• Low gate charge ( Typ. 238nC)
• Low Crss ( Typ. 64pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
May 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G DS
TO-264
FDL Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FDL100N50F
500
±30
100
60
400
5000
100
73.5
20
2500
20
-55 to +150
300
Min.
-
0.1
-
Max.
0.05
-
30
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. A
1
www.fairchildsemi.com
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Package Marking and Ordering Information
Device Marking
FDL100N50F
Device
FDL100N50F
Package
TO-264
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VDS = 20V, ID = 50A
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDD = 400V, ID = 50A
VGS = 10V
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 50A
RG = 4.7Ω
Drain-Source Diode Characteristics
www.DataSIhSeet4U.com
ISM
VSD
trr
Qrr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, ISD = 100A
VGS = 0V, ISD = 100A
dIF/dt = 100A/µs
Min.
500
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.043
95
12000
1700
64
238
74
95
63
186
202
105
-
-
-
250
1.5
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0
0.055
-
V
Ω
S
- pF
- pF
- pF
- nC
- nC
- nC
- ns
- ns
- ns
- ns
100 A
400 A
1.5 V
- ns
- nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDL100N50F Rev. A
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300 VGS = 15.0 V
10.0 V
100 8.0 V
7.0 V
6.5 V
6.0 V
10
1
0.5
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.07
0.06
0.05
0.04
VGS = 10V
VGS = 20V
www.DataSheet4U0..0c3om
0
*Note: TC = 25oC
50 100 150 200
ID, Drain Current [A]
250
Figure 5. Capacitance Characteristics
30000
25000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
15000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
10000
5000
Crss
0
10-1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
400
100
150oC
25oC
10
-55oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
4 6 8 10
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8
VDS = 250V
VDS = 400V
6
4
2
0 *Note: ID = 50A
0 50 100 150 200 250
Qg, Total Gate Charge [nC]
FDL100N50F Rev. A
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDL100N50F | N-Channel MOSFET | Fairchild Semiconductor |
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