FDI040N06 PDF даташит

Спецификация FDI040N06 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDI040N06
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

8 Pages

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June 2009

FDI040N06

N-Channel PowerTrench® MOSFET

60V, 168A, 4.0mΩ

Features

• RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Application

• DC to DC convertors / Synchronous Rectification

GDS

I2-PAK

FDI Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol

Parameter

www.DataVSDhSeSet4U.com Drain to Source Voltage

VGSS

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC, Silicion Limited)

-Continuous (TC = 100oC, Silicion Limited)

-Continuous (TC = 25oC, Package Limited)

IDM Drain Current

- Pulsed

(Note 1)

EAS Single Pulsed Avalanche Energy

(Note 2)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

PD Power Dissipation

(TC = 25oC)

- Derate above 25oC

Ratings

±20

168*

118*

120

672

872

7.0

231

1.54

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

0.65

62.5

Units

V/ns

W/oC

Units

oC/W

FDI040N06 Rev. A

www.fairchildsemi.com

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Package Marking and Ordering Information

Device Marking

FDI038N06

Device

FDI038N06

Package

TO-262

Reel Size

Tube

Tape Width

Quantity

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TC= 25oC

ID = 250µA, Referenced to 25oC

VDS = 60V, VGS = 0V

VDS = 60V, VGS = 0V, TC = 150oC

VGS = ±20V, VDS = 0V

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250µA

VGS = 10V, ID = 75A

VDS = 10V, ID = 75A

(Note 4)

2.5

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 48V, ID = 75A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 30V, ID = 75A

VGS = 10V, RGEN = 4.7Ω

(Note 4, 5)

Drain-Source Diode Characteristics

www.DataSheet4U.com

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 75A

dIF/dt = 100A/µs

(Note 4)

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics

Typ.

0.04

3.5

3.2

169

6190

900

385

102

Max. Units

500

±100

V/oC

µA

4.5 V

4.0 mΩ

-S

8235

1195

580

133

70 ns

90 ns

120 ns

58 ns

168 A

672 A

1.3 V

- ns

- nC

FDI040N06 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

1000

100

VGS = 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

0.1

0.01

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

0.1 1

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

4.0

Figure 2. Transfer Characteristics

1000

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

100

175oC

25oC

-55oC

2345678

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1000

3.5 VGS = 10V

3.0 VGS = 20V

www.DataSheet4U.c2o.5m

*Note: TC = 25oC

60 120 180 240 300 360

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

10000

Ciss

1000

*Note:

1. VGS = 0V

2. f = 1MHz

Coss

Crss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

100

0.1

VDS, Drain-Source Voltage [V]

175oC

100

25oC

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 12V

8 VDS = 30V

VDS = 48V

*Note: ID = 75A

0 20 40 60 80 100 120

Qg, Total Gate Charge [nC]

FDI040N06 Rev. A

3 www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDI040N06	N-Channel MOSFET	Fairchild Semiconductor

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