FDI030N06 PDF даташит

Спецификация FDI030N06 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDI030N06
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

8 Pages

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June 2009

FDI030N06

N-Channel PowerTrench® MOSFET

60V, 193A, 3.2mΩ

Features

• RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

GDS

I2-PAK

FDI Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol

Parameter

Ratings

VDSS

Drain to Source Voltage

www.DataVSGhSeSet4U.com Gate to Source Voltage

ID Drain Current

-Continuous (TC = 25oC, Silicon Limited)

-Continuous (TC = 100oC, Silicon Limited)

-Continuous (TC = 25oC, Package Limited)

IDM Drain Current

- Pulsed

(Note 1)

EAS Single Pulsed Avalanche Energy

(Note 2)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

PD Power Dissipation

(TC = 25oC)

- Derate above 25oC

±20

193*

136*

120

772

1434

231

1.54

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

0.65

62.5

Units

V/ns

W/oC

Units

oC/W

FDI030N06 Rev. A

www.fairchildsemi.com

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Package Marking and Ordering Information

Device Marking

FDI030N06

Device

FDI030N06

Package

TO-262

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TC = 25oC

ID = 1mA, Referenced to 25oC

VDS = 48V, VGS = 0V

VDS = 48V, TC = 150oC

VGS = ±20V, VDS = 0V

Min.

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250µA

VGS = 10V, ID = 75A

VDS = 10V, ID = 75A

(Note 4)

2.5

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 48V, ID = 75A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 30V, ID = 75A

VGS = 10V, RGEN = 4.7Ω

(Note 4, 5)

Drain-Source Diode Characteristics

www.DataSIhSeet4U.com Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 75A

dIF/dt = 100A/µs

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

(Note 4)

Typ.

0.05

3.5

2.6

154

7380

1095

415

116

178

Max. Units

500

±100

V/oC

µA

4.5 V

3.2 mΩ

-S

9815

1455

625

151

87 ns

366 ns

118 ns

76 ns

193 A

772 A

1.3 V

- ns

- nC

FDI030N06 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

700

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

100

0.1

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

3.5

3.0

VGS = 10V

2.5 VGS = 20V

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2.0

*Note: TC = 25oC

70 140 210 280

ID, Drain Current [A]

350

Figure 5. Capacitance Characteristics

12000

9000

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

6000

3000

0.1

Coss

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

1 10

VDS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

400

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

100

150oC

-55oC

10 25oC

2468

VGS, Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

400

100

150oC

25oC

*Notes:

1. VGS = 0V

1 2. 250µs Pulse Test

0.0 0.5 1.0 1.5

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 15V

8 VDS = 30V

VDS = 48V

*Note: ID = 75A

0 20 40 60 80 100 120

Qg, Total Gate Charge [nC]

FDI030N06 Rev. A

3 www.fairchildsemi.com

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FDI030N06	N-Channel MOSFET	Fairchild Semiconductor

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