FDG410NZ PDF даташит

Спецификация FDG410NZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDG410NZ
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

7 Pages

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FDG410NZ

Single N-Channel PowerTrench® MOSFET

20 V, 2.2 A, 70 mΩ

March 2009

Features

General Description

Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A

Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A

Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A

Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A

HBM ESD protection level > 2 kV (Note 3)

High performance trench technology for extremely low rDS(on)

High power and current handling capability

Fast switching speed

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

been optimized use in small switching regulaters, providing an

extremely low rDS(on) and gate charge (Qg) in a small package.

Applications

DC/DC converter

Power management

Load switch

Low gate charge

RoHS Compliant

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SC70-6

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol

VDS

VGS

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

-Continuous

-Pulsed

TA = 25 °C

Power Dissipation

TA = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

(Note 1b)

Ratings

±8

2.2

6.0

0.42

0.38

-55 to +150

Units

°C

RθJA

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

(Note 1b)

300

333

°C/W

Device Marking

.41

Device

FDG410NZ

Package

SC70-6

Reel Size

7”

Tape Width

8 mm

Quantity

3000 units

FDG410NZ Rev.B

www.fairchildsemi.com

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Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

∆TJ

IDSS

IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ID = 250 µA, VGS = 0 V

ID = 250 µA, referenced to 25 °C

VDS = 16 V, VGS = 0 V

VGS = ±8 V, VDS = 0 V

17 mV/°C

1 µA

±10 µA

On Characteristics

VGS(th)

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = 250 µA

0.4 0.7 1.0

ID = 250 µA, referenced to 25 °C

-3 mV/°C

VGS = 4.5 V, ID = 2.2 A

VGS = 2.5 V, ID = 2.0 A

VGS = 1.8 V, ID = 1.8 A

VGS = 1.5 V, ID = 1.5 A

VGS = 4.5 V, ID = 2.2 A,

TJ = 125 °C

VDD = 5 V, ID = 2.2 A

50 70

56 77

67 87 mΩ

83 115

71 100

11 S

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = 10 V, VGS = 0 V,

f = 1 MHz

400 535

70 95

45 70

2.8

Ω

Switching Characteristics

td(on)

td(off)

Qgs

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Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = 10 V, ID = 2.2 A,

VGS = 4.5 V, RGEN = 6 Ω

VGS = 4.5 V, VDD = 10 V,

ID = 2.2 A

5.3 11 ns

2.3 10

18 33 ns

2.3 10

5.1 7.2 nC

0.6 nC

1.0 nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain-Source Diode Forward Current

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.35 A (Note 2)

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 2.2 A, di/dt = 100 A/µs

0.35 A

0.6 1.2

11 20 ns

2.5 10 nC

Notes:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by

the user's board design.

a. 300 °C/W when mounted

on a 1 in2 pad of 2 oz copper.

b. 333 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

FDG410NZ Rev.B

www.fairchildsemi.com

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Typical Characteristics TJ = 25 °C unless otherwise noted

VGS = 4.5 V

VGS = 3.5 V

VGS = 2.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

0 0.2 0.4 0.6 0.8 1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

2.5

VGS = 1.5 V

2.0

VGS = 1.8 V

1.5

VGS = 3.5 V VGS = 2.5 V

1.0

0.5

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

234

ID, DRAIN CURRENT (A)

VGS = 4.5 V

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

ID = 2.2 A

VGS = 4.5 V

1.4

1.2

1.0

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

www.DataSheet4U.coFmigure 3. Normalized On Resistance

vs Junction Temperature

PULSE DURATION = 80 µs

5 DUTY CYCLE = 0.5% MAX

VDS = 5 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

0.0 0.5 1.0 1.5 2.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

180

PULSE DURATION = 80 µs

160 DUTY CYCLE = 0.5% MAX

140 ID = 1.1 A

120

100

TJ = 125 oC

60 TJ = 25 oC

1.0

1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

4.5

VGS = 0 V

TJ = 125 oC

0.1

TJ = 25 oC

TJ = -55 oC

0.01

0.2

0.4 0.6 0.8 1.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDG410NZ Rev.B

www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDG410NZ	N-Channel MOSFET	Fairchild Semiconductor

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