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FDG1024NZ PDF даташит
| Спецификация FDG1024NZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDG1024NZ |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 mΩ
Features
Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
HBM ESD protection level >2 kV (Note 3)
Very low level gate drive requirements allowing operation in
3 V circuits (VGS(th) < 1.5 V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
S2
G2
D1
D2
G1
S1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
SC70-6
www.DataShMeeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
1.2
6
0.36
0.30
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
350
415
°C/W
Device Marking
.24
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
20
V
14 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.4 0.8 1.0
V
ID = 250 µA, referenced to 25 °C
-3 mV/°C
VGS = 4.5 V, ID = 1.2 A
VGS = 2.5 V, ID = 1.0 A
VGS = 1.8 V, ID = 0.9 A
VGS = 1.5 V, ID = 0.8 A
VGS = 4.5 V, ID = 1.2 A,
TJ =125 °C
VDD = 5 V, ID = 1.2 A
160 175
185 215
232 270 mΩ
321 389
220 259
4S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
115 150
25 35
20 25
4.6
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
www.DataSheet4U.com
Drain-Source Diode Characteristics
VDD = 10 V, ID = 1.2 A,
VGS = 4.5 V, RGEN = 6 Ω
VGS = 4.5 V, VDD = 10 V,
ID = 1.2 A
3.7 10 ns
1.7 10 ns
11 19 ns
1.5 10 ns
1.8 2.6 nC
0.3 nC
0.4 nC
IS Maximum Continuous Drain-Source Diode Forward Current
0.3 A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.3 A
(Note 2)
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.2 A, di/dt = 100 A/µs
10 20 ns
1.9 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a. 350 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 415 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 4.5 V
5 VGS = 3.5 V
VGS = 2.5 V
4
PULSE DURATION = 80 µs
3 DUTY CYCLE = 0.5% MAX
2 VGS = 1.8 V
1 VGS = 1.5 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V
VGS = 2.5 V
VGS = 3.5 V
1.5
1.0
0.5
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1234
ID, DRAIN CURRENT (A)
VGS = 4.5 V
56
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 1.2 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
6
PULSE DURATION = 80 µs
5 DUTY CYCLE = 0.5% MAX
VDS = 5 V
4
3
TJ = 25 oC
2
TJ = 125 oC
1
TJ = -55 oC
0
0123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
600
PULSE DURATION = 80 µs
500 DUTY CYCLE = 0.5% MAX
ID = 1.2 A
400
300 TJ = 125 oC
200
100 TJ = 25 oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
10
VGS = 0 V
1 TJ = 125 oC
0.1
TJ = 25 oC
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.4
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
3
www.fairchildsemi.com
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| FDG1024NZ | N-Channel MOSFET | Fairchild Semiconductor |
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