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FDD8426H PDF даташит
| Спецификация FDD8426H изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Dual P and N-Channel MOSFET». |
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Детали детали
| Номер произв | FDD8426H |
| Описание | Dual P and N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
11 Pages
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FDD8426H
September 2009
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A
Q2: P-Channel
Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A
Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A
100% UIL Tested
RoHS Compliant
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
D1/D2
D1 D2
G2
S2
G1
S1
Dual DPAK 4L
G1 G2
S1
N-Channel
S2
P-Channel
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25°C
unless
otherwise
noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current - Continuous (Package Limited)
ID
- Continuous (Silicon Limited)
- Continuous
TC = 25°C
TA = 25°C
- Pulsed
PD
EAS
TJ, TSTG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
TC = 25°C
TA = 25°C
TA = 25°C
(Note 1)
(Note 1a)
(Note 1b)
(Note 3)
Thermal Characteristics
Q1 Q2
40 -40
±20 ±20
17 -17
56 -48
12 -10
40 -40
56 65
3.1
1.3
112 162
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
Package Marking and Ordering Information
(Note 1)
(Note 1)
1.4
1.4
°C/W
Device Marking
FDD8426H
Device
FDD8426H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500units
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VDS = 32 V, VGS = 0 V
VDS = -32 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
Type Min Typ Max Units
Q1 40
Q2 -40
V
Q1
Q2
35
-32
mV/°C
Q1
Q2
1
-1
µA
Q1 ±100 nA
Q2 ±100 nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 µA
VGS = VDS, ID = -250 µA
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
VGS = -10 V, ID = -10 A
VGS = -4.5 V , ID = -8.3 A
VGS = -10 V, ID = -10 A, TJ = 125 °C
VDD = 5 V, ID = 12 A
VDD = -5 V, ID = -10 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1
VDS = 20 V, VGS = 0 V, f = 1MHZ
Q2
VDS = -20 V, VGS = 0 V, f = 1MHZ
Rg Gate Resistance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.5
-1.5
2
2
3.0
-3.0
V
-6
6
mV/°C
9.3 12
11 15
14 22
mΩ
13 17
19 27
19 30
53
31
S
2055
1900
255
330
165
200
1.1
3.3
2735
2650
335
440
245
300
pF
pF
pF
Ω
www.DataShSewet4itUc.hcoinmg Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 20 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
Q2
VDD = -20 V, ID = -10 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to 10 V Q1
VGS = 0 V to -10 V VDD = 20 V,
VGS = 0 V to 5 V ID = 12 A
VGS = 0 V to -5 V
Q2
VDD = -20 V,
ID = -10 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9.7
9.7
20
20
ns
4.9
6.9
10
14
ns
27
32
43
51
ns
3.7
7.5
10
15
ns
38
37
53
52
nC
20
20
28
28
nC
6.3
6.6
nC
7.1
8
nC
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 12 A
VGS = 0 V, IS = -10 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 12 A, di/dt = 100 A/µs
Q2
IF = -10 A, di/dt = 100 A/µs
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
-0.8 -1.2
22 35
25 40
11 20
14 22
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
Q1 a. 40 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper
a. 40 °C/W when mounted on
Q2 a 1 in2 pad of 2 oz copper
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V.
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDD8426H | Dual P and N-Channel MOSFET | Fairchild Semiconductor |
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