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FDU6796A PDF даташит
| Спецификация FDU6796A изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDU6796A |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
March 2009
FDD6796A / FDU6796A_F071
N-Channel PowerTrench® MOSFET
25 V, 5.7 mΩ
Features
General Description
Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A
100% UIL tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
G
G
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
40
67
20
150
40
42
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.6
40
°C/W
Device Marking
FDD6796A
FDU6796A
Device
FDD6796A
FDU6796A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15.2 A
VGS = 10 V, ID = 20 A, TJ = 150 °C
VDS = 5 V, ID = 20 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 13 V,
ID = 20 A
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 20 A
(Note 2)
(Note 2)
IF = 20 A, di/dt = 100 A/µs
Min
25
1.0
Typ
16
1.9
-6
4.3
11.1
6.5
118
1336
298
266
1.2
8
7
19
4
24
14
4.0
5.7
0.8
0.9
15
4
Max Units
1
±100
V
mV/°C
µA
nA
3.0 V
mV/°C
5.7
15.0 mΩ
8.6
S
1780
400
400
pF
pF
pF
Ω
16 ns
14 ns
34 ns
10 ns
34 nC
20 nC
nC
nC
1.2
V
1.3
27 ns
10 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A.
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
150
VGS = 10 V
120
VGS = 8 V
VGS = 6 V
VGS = 4.5 V
90
60
30
0
0.0
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
Figure 1. On Region Characteristics
4
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
VGS = 4 V
2 VGS = 4.5 V
VGS = 8 V VGS = 6 V
1
VGS = 10 V
0
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 20 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
20
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15 ID = 20 A
10
TJ = 150 oC
5
TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
120
VDS = 3 V
90
60
30
0
0
TJ = 175 oC
TJ = 25 oC
TJ = -55 oC
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
6
200
100
VGS = 0 V
10
TJ = 175 oC
1 TJ = 25 oC
TJ = -55 oC
0.1
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDU6796A | N-Channel MOSFET | Fairchild Semiconductor |
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