FDD6796A PDF даташит

Спецификация FDD6796A изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDD6796A
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

6 Pages

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March 2009

FDD6796A / FDU6796A_F071

N-Channel PowerTrench® MOSFET

25 V, 5.7 mΩ

Features

General Description

Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A

Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A

100% UIL tested

RoHS Compliant

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

been optimized for low gate charge, low rDS(on) and fast

switching speed.

Applications

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

D-PAK

(TO-252)

Short-Lead I-PAK

(TO-251AA)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

www.DataSheetS4Uym.cbomol

VDS

VGS

EAS

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

-Pulsed

TC = 25 °C

TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

(Note 3)

(Note 1a)

Ratings

±20

150

3.7

-55 to +175

Units

°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

3.6

°C/W

Device Marking

FDD6796A

FDU6796A

Device

FDD6796A

FDU6796A_F071

Package

D-PAK (TO-252)

TO-251AA

Reel Size

13 ’’

N/A(Tube)

Tape Width

12 mm

N/A

Quantity

2500 units

75 units

FDD6796A / FDU6796A_F071 Rev.C1

www.fairchildsemi.com

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

∆BVDSS

∆TJ

IDSS

IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ID = 250 µA, VGS = 0 V

ID = 250 µA, referenced to 25 °C

VDS = 20 V, VGS = 0 V

VGS = ±20 V, VDS = 0 V

On Characteristics

VGS(th)

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = 250 µA

ID = 250 µA, referenced to 25 °C

VGS = 10 V, ID = 20 A

VGS = 4.5 V, ID = 15.2 A

VGS = 10 V, ID = 20 A, TJ = 150 °C

VDS = 5 V, ID = 20 A

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = 13 V, VGS = 0 V,

f = 1 MHz

Switching Characteristics

td(on)

td(off)

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = 13 V, ID = 20 A,

VGS = 10 V, RGEN = 6 Ω

VGS = 0 V to 10 V

VGS = 0 V to 5 V VDD = 13 V,

ID = 20 A

www.DataShDereat4iUn.-cSomource Diode Characteristics

VSD Source to Drain Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0 V, IS = 3.1 A

VGS = 0 V, IS = 20 A

(Note 2)

IF = 20 A, di/dt = 100 A/µs

Min

1.0

Typ

1.9

-6

4.3

11.1

6.5

118

1336

298

266

1.2

4.0

5.7

0.8

0.9

Max Units

±100

mV/°C

µA

3.0 V

mV/°C

5.7

15.0 mΩ

8.6

1780

400

Ω

16 ns

14 ns

34 ns

10 ns

34 nC

20 nC

1.2

1.3

27 ns

10 nC

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RθJC is guaranteed by design while RθJA is determined by the user’s board design.

a) 40 °C/W when mounted on a

1 in2 pad of 2 oz copper

b) 96 °C/W when mounted on

a minimum pad

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3: EAS of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A.

FDD6796A / FDU6796A_F071 Rev.C1

www.fairchildsemi.com

No Preview Available !

Typical Characteristics TJ = 25 °C unless otherwise noted

150

VGS = 10 V

120

VGS = 8 V

VGS = 6 V

VGS = 4.5 V

0.0

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.5

Figure 1. On Region Characteristics

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4 V

2 VGS = 4.5 V

VGS = 8 V VGS = 6 V

VGS = 10 V

0 30 60 90 120 150

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.8

ID = 20 A

1.6 VGS = 10 V

1.4

1.2

1.0

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

www.DataSheet4U.coFmigure 3. Normalized On Resistance

vs Junction Temperature

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

15 ID = 20 A

TJ = 150 oC

TJ = 25 oC

2 4 6 8 10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

150

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

120

VDS = 3 V

TJ = 175 oC

TJ = 25 oC

TJ = -55 oC

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

200

100

VGS = 0 V

TJ = 175 oC

1 TJ = 25 oC

TJ = -55 oC

0.1

0.2

0.4 0.6 0.8 1.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDD6796A / FDU6796A_F071 Rev.C1

www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDD6796	N-Channel MOSFET	Fairchild Semiconductor
FDD6796A	N-Channel MOSFET	Fairchild Semiconductor

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