|
FDD6780A PDF даташит
| Спецификация FDD6780A изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
|
|
Детали детали
| Номер произв | FDD6780A |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
FDD6780A / FDU6780A_F071
N-Channel PowerTrench® MOSFET
January 2009
25 V, 8.6 mΩ
Features
General Description
Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A
Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
GG
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
48
16.4
100
24
32.6
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case TO-252, TO-251
Thermal Resistance, Junction to Ambient TO-252
Package Marking and Ordering Information
(Note 1a)
4.6
40
°C/W
Device Marking
FDD6780A
FDU6780A
Device
FDD6780A
FDU6780A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
25
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 16.4 A
VGS = 10 V, ID = 16.4 A
Short-Lead I-PAK version
VGS = 4.5 V, ID = 12.2 A
VGS = 4.5 V, ID = 12.2 A
Short-Lead I-PAK version
VGS = 10 V, ID = 16.4 A, TJ = 150 °C
VDS = 5 V, ID = 16.4 A
1.0
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
www.DataShQeegt4U.com Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
VDD = 13 V, ID = 16.4 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 13 V,
ID = 16.4 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 16.4 A
(Note 2)
(Note 2)
IF = 16.4 A, di/dt = 100 A/µs
Typ Max Units
V
14 mV/°C
1
±100
µA
nA
1.9 3.0
V
-5 mV/°C
6.8 8.6
7.0 8.8
14.1 19.0
mΩ
14.3 19.2
10.3 13.0
70
S
927 1235
197 265
181 275
1.2
pF
pF
pF
Ω
7 14 ns
3 10 ns
16 29 ns
3 10 ns
17 24 nC
9.2 13 nC
2.8 nC
4.0 nC
0.8 1.2
0.9 1.3
V
15 27 ns
4 10 nC
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A.
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
3
www.fairchildsemi.com
Скачать PDF:
[ FDD6780A.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FDD6780 | N-Channel Power Trench MOSFET | Fairchild Semiconductor |
| FDD6780A | N-Channel MOSFET | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |