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FDD6760A PDF даташит
| Спецификация FDD6760A изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDD6760A |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
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FDD6760A
N-Channel PowerTrench® MOSFET
January 2009
25 V, 3.2 mΩ
Features
General Description
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A
Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A
100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
S
D
DTO-P-2A5K2
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
50
131
27
200
72
65
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.3
40
°C/W
Device Marking
FDD6760A
Device
FDD6760A
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
25
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
16 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
1 µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0 1.6 3.0
V
∆VGS(th) Gate to Source Threshold Voltage
∆TJ Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-7 mV/°C
VGS = 10 V, ID = 27 A
2.3 3.2
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 21 A
4.4 6.0 mΩ
VGS = 10 V, ID = 27 A, TJ = 150 °C
3.5 4.9
gFS Forward Transconductance
VDS = 5 V, ID = 27 A
186 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1MHz
f = 1MHz
2380
525
470
1.3
3170
700
710
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 27 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 13 V,
ID = 17 A
10 20 ns
9 18 ns
28 ns
6 ns
44 62 nC
25 35 nC
6 nC
9.9 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 27 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 27A, di/dt = 100 A/µs
0.7 1.2
0.8 1.3
V
21 34 ns
8 16 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 29 A.
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
200
VGS = 10 V
VGS = 4.5 V
150
VGS = 6 V
VGS = 4 V
100
VGS = 3.5 V
50
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4
VGS = 3.5 V
3 PULSE DURATION = 80 µs
VGS = 4 V
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
2
VGS = 6 V
1
VGS = 10 V
0
0 50 100 150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
200
1.8
ID = 27 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
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200
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150 VDS = 3.5 V
100
50
0
0
TJ = 25 oC
TJ = 175 oC
TJ = -55 oC
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
6
14
PULSE DURATION = 80 µs
12 DUTY CYCLE = 0.5% MAX
ID = 27 A
10
8
6 TJ = 150 oC
4
2 TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
200
100 VGS = 0 V
10
TJ = 175 oC
1 TJ = 25 oC
TJ = -55 oC
0.1
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDD6760A | N-Channel MOSFET | Fairchild Semiconductor |
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