FDD5N53 PDF даташит

Спецификация FDD5N53 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDD5N53
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FDD5N53/FDU5N53

N-Channel MOSFET

530V, 4A, 1.5Ω

Features

• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A

• Low gate charge ( Typ. 11nC)

• Low Crss ( Typ. 5pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

January 2009

UniFETTM

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power suppliesand active power

factor correction.

D-PAK

FDD Series

G D S I-PAK

FDU Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol

VDSS

www.DataSVheGeStS4U.com

IDM

EAS

IAR

EAR

dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

FDD5N53/FDU5N53

530

±30

2.4

256

4.5

0.3

-55 to +150

300

Ratings

1.4

110

Units

V/ns

W/oC

Units

oC/W

FDD5N53/FDU5N53 Rev. A

www.fairchildsemi.com

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDD5N53

Device

FDD5N53TM

Package

D-PAK

Reel Size

380mm

Tape Width

16mm

FDD5N53

FDD5N53TF

D-PAK

380mm

16mm

FDU5N53

FDU5N53TU

I-PAK

Quantity

2500

2000

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250μA, VGS = 0V, TJ = 25oC

ID = 250μA, Referenced to 25oC

VDS = 530V, VGS = 0V

VDS = 424V, TC = 125oC

VGS = ±30V, VDS = 0V

530

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250μA

VGS = 10V, ID = 2A

VDS = 40V, ID = 2A

(Note 4)

3.0

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 400V, ID = 5A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

td(off)

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Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 250V, ID = 5A

RG = 25Ω

(Note 4, 5)

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 4A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 5A

dIF/dt = 100A/μs

(Note 4)

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3: ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics

Typ.

0.6

1.25

4.3

480

300

1.8

Max. Units

±100

V/oC

μA

5.0 V

1.5 Ω

-S

640 pF

88 pF

8 pF

15 nC

- nC

36 ns

54 ns

66 ns

50 ns

16 A

1.4 V

- ns

- μC

FDD5N53/FDU5N53 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

20 VGS = 15.0V

10 10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

0.1

0.04

0.1

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

1 10

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

3.0

2.5

2.0 VGS = 10V

1.5 VGS = 20V

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*Note: TJ = 25oC

369

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

1000

750

500

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Ciss

Coss

250

Crss

0.1 1 10

VDS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

150oC

25oC

-55oC

0.1

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

567

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

150oC

25oC

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

0.4 0.8 1.2 1.6

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 100V

VDS = 250V

8 VDS = 400V

*Note: ID = 5A

0 4 8 12

Qg, Total Gate Charge [nC]

FDD5N53/FDU5N53 Rev. A

3 www.fairchildsemi.com

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