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FDB3860 PDF даташит
| Спецификация FDB3860 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDB3860 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
High performance trench technology for extremely low rDS(on)
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion
Synchronous Rectifier
DD
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
30
6.4
60
96
71
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.75
40
°C/W
Device Marking
FDB3860
Device
FDB3860
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
104 mV/°C
1
±100
µA
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
2.5 3.8 4.5
V
ID = 250 µA, referenced to 25 °C
-11 mV/°C
VGS = 10 V, ID = 5.9 A
VGS = 10 V, ID = 5.9 A, TJ = 125 °C
VDS = 10 V, ID = 5.9 A
31 37
mΩ
56 67
18 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
1310
100
40
1.7
1740
130
65
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10 V
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 5.9 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 50 V, ID = 5.9 A
12 22 ns
6 12 ns
17 31 ns
3 10 ns
21 30 nC
6.9 nC
5.4 nC
Drain-Source Diode Characteristics
www.DataShVeSeDt4U.com Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A
VGS = 0 V, IS = 5.9 A
(Note 2)
(Note 2)
IF = 5.9 A, di/dt = 100 A/µs
0.7 1.2
0.8 1.3
V
35 56 ns
37 60 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
60
VGS = 10 V
VGS = 8.0 V
50
VGS = 7.0 V
40
PULSE DURATION = 80 µs
30 DUTY CYCLE = 0.5% MAX
20 VGS = 6.5 V
10
0
0
VGS = 6.0 V
1234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 1. On Region Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 6.0 V
VGS = 6.5 V
VGS = 7.0 V
VGS = 8.0 V
VGS = 10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
2.0
ID = 5.9 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
ID = 5.9 A
60
TJ = 125 oC
40
20 TJ = 25 oC
0
56789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
50
VDS = 10 V
40
30
20
10
0
2
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
100
VGS = 0 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
3
www.fairchildsemi.com
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| FDB3860 | N-Channel MOSFET | Fairchild Semiconductor |
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