FDB12N50U PDF даташит

Спецификация FDB12N50U изготовлена «Fairchild Semiconductor» и имеет функцию, называемую « N-Channel MOSFET».

Детали детали

Номер произв	FDB12N50U
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FDB12N50U

N-Channel MOSFET, FRFET

500V, 10A, 0.8Ω

Features

• RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A

• Low gate charge ( Typ. 21nC)

• Low Crss ( Typ. 11pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

March 2008

Ultra FRFETTM

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

D2-PAK

TO-263AB

FDB Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol

Parameter

VDSS

www.DataSVheGeStS4U.com

IDM

EAS

IAR

EAR

dv/dt

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

PD Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Ratings

500

±30

456

16.5

4.5

165

1.33

-55 to +150

300

Ratings

0.75

62.5

Units

V/ns

W/oC

Units

oC/W

FDB12N50U Rev. A2

www.fairchildsemi.com

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDB12N50U

Device

FDB12N50UTM_WS

Package

D2-PAK

Reel Size

330mm

Tape Width

24mm

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TJ = 25oC

ID = 250µA, Referenced to 25oC

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

VGS = ±30V, VDS = 0V

500

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250µA

VGS = 10V, ID = 5A

VDS = 40V, ID = 5A

(Note 4)

3.0

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 400V, ID = 10A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 250V, ID = 10A

RG = 25Ω

(Note 4, 5)

www.DataSDhreaeti4nU-S.coomurce Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 12A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 12A

dIF/dt = 100A/µs

(Note 4)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 9mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Typ.

0.7

0.65

1050

140

0.1

Quantity

800

Max. Units

250

±100

V/oC

µA

5.0 V

0.8 Ω

-S

1395

190

80 ns

100 ns

130 ns

80 ns

10 A

40 A

1.6 V

- ns

- µC

FDB12N50U Rev. A2

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

30 VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

10 6.0 V

5.5 V

Figure 2. Transfer Characteristics

150oC

25oC

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

1 10 20

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

1.4

1.2

1.0

VGS = 10V

0.8 VGS = 20V

0.6

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*Note: TJ = 25oC

5 10 15

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

2000

1500

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

Ciss 1. VGS = 0V

2. f = 1MHz

1000

Coss

500

Crss

0.1 1

VDS, Drain-Source Voltage [V]

*Notes:

1. VDS = 20V

2. 250µs Pulse Test

4.0 4.5 5.0 5.5 6.0 6.5 7.0

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

100

150oC

10 25oC

*Notes:

1. VGS = 0V

1 2. 250µs Pulse Test

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 100V

8 VDS = 250V

VDS = 400V

0 *Note: ID = 10A

0 5 10 15 20 25

Qg, Total Gate Charge [nC]

FDB12N50U Rev. A2

3 www.fairchildsemi.com

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