FDB12N50TM PDF даташит

Спецификация FDB12N50TM изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDB12N50TM
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FDB12N50TM

N-Channel MOSFET

500V, 11.5A, 0.65Ω

Features

• RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A

• Low gate charge ( Typ. 22nC)

• Low Crss ( Typ. 12pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

June 2007

UniFETTM

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

D2-PAK

FDB Series

GDS

I2-PAK

FDI Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol

VDSS

www.DataSVheGeStS4U.com

IDM

EAS

IAR

EAR

dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Thermal Characteristics

Symbol

Parameter

RθJC

Thermal Resistance, Junction to Case

RθJA*

Thermal Resistance, Junction to Ambient*

RθJA

Thermal Resistance, Junction to Ambient

*When mounted on the minimum pad size recommended (PCB Mount)

FDB12N50TM Rev. A1

Ratings

500

±30

11.5

6.9

456

11.5

16.7

4.5

165

1.33

-55 to +150

300

Units

V/ns

W/oC

Ratings

0.75

62.5

Units

oC/W

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDB12N50

FDI12N50

Device

FDB12N50TM

FDI12N50TU

Package

D2-PAK

I2-PAK

Reel Size

330mm

Tape Width

24mm

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

ΔBVDSS

/ ΔTJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250μA, VGS = 0V, TJ = 25oC

ID = 250μA, Referenced to 25oC

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

VGS = ±30V, VDS = 0V

500

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250μA

VGS = 10V, ID = 6A

VDS = 25V, ID = 6A

(Note 4)

3.0

Dynamic Characteristics

Ciss

Coss

Crss

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 400V, ID = 11.5A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

Turn-On Delay Time

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

www.DataSDhreaeti4nU-S.coomurce Diode Characteristics

VDD = 250V, ID = 11.5A

RG = 25Ω

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 11.5A

trr Reverse Recovery Time

VGS = 0V, ISD = 11.5A

Qrr Reverse Recovery Charge

dIF/dt = 100A/μs

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

(Note 4, 5)

(Note 4)

Typ.

0.66

0.55

985

140

370

3.8

Quantity

800

Max. Units

±100

V/oC

μA

5.0 V

0.65 Ω

-S

1315

190

60 ns

130 ns

105 ns

85 ns

11.5 A

46 A

1.4 V

- ns

- μC

FDB12N50TM Rev. A1

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

30 VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

10 6.0 V

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

1 10 20

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

1.4

1.2

1.0

0.8

0.6

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0.4

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

5 10 15

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

2000

1500

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

1000

500 Crss

0.1 1 10

VDS, Drain-Source Voltage [V]

FDB12N50TM Rev. A1

Figure 2. Transfer Characteristics

150oC

-55oC

25oC

0.1

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

100

150oC

10 25oC

*Notes:

1. VGS = 0V

1 2. 250μs Pulse Test

0.3 0.6 0.9 1.2 1.5 1.8

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 100V

VDS = 250V

8 VDS = 400V

0 *Note: ID = 11.5A

0 5 10 15 20 25

Qg, Total Gate Charge [nC]

3 www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDB12N50TM	N-Channel MOSFET	Fairchild Semiconductor

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