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FDB12N50F PDF даташит
| Спецификация FDB12N50F изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDB12N50F |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
FDB12N50F
N-Channel MOSFET, FRFET
500V, 11.5A, 0.7Ω
Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
November 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
DD
G
S
D2-PAK
TO-263AB
FDB Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
500
±30
11.5
6.9
46
456
11.5
16.5
4.5
165
1.33
-55 to +150
300
Ratings
0.75
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDB12N50F Rev. A
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB12N50F
Device
FDB12N50FTM_WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 40V, ID = 6A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25Ω
(Note 4, 5)
-
-
-
-
www.DataSDhreaeti4nU-S.coomurce Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.59
12
1050
135
11
21
6
9
21
45
50
35
-
-
-
134
0.37
Quantity
800
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
0.7 Ω
-S
1395
180
17
30
-
-
pF
pF
pF
nC
nC
nC
50 ns
100 ns
110 ns
80 ns
11.5 A
46 A
1.5 V
- ns
- µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB12N50F Rev. A
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 10.0 V
8.0 V
10 7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.05
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1 10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.9
0.8
0.7
VGS = 10V
0.6 VGS = 20V
www.DataSheet4U.0c.o5m
0
* Note : TJ = 25oC
6 12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
30
10
150oC
25oC
* Notes :
1. VDS = 20V
2. 250µs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10 25oC
Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5 2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 * Note : ID = 11.5A
0 4 8 12 16 20 24
Qg, Total Gate Charge [nC]
FDB12N50F Rev. A
3 www.fairchildsemi.com
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