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FDB120N10 PDF даташит
| Спецификация FDB120N10 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDB120N10 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
FDB120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
• RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
FDB120N10
100
±20
74
52
296
198
6.0
170
1.14
-55 to +175
300
FDB120N10
0.88
62.5
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information
Part Number
FDB120N10
Top Mark
FDB120N10
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V,TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 74 A
VDS = 10 V, ID = 74 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V ID = 74 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 74 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 74 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 74 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.11 mH, IAS = 60 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 74 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
100
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
9.7
105
4215
405
170
66
26
20
27
105
39
15
-
-
-
44
67
Quantity
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
12 mΩ
-S
5605
540
255
86
-
-
pF
pF
pF
nC
nC
nC
64 ns
220 ns
88 ns
40 ns
74 A
296 A
1.3 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
2
www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10
1
0.2
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.04
0.03
0.02
0.01
VGS = 10V
VGS = 20V
0.00
0
*Note: TC = 25oC
50 100 150 200 250 300
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
7000
5600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
4200
2800
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
1400
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
500
100
175oC
10
-55oC
25oC
*Notes:
1. VDS = 10V
1 2. 250μs Pulse Test
3456789
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
10
25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
VDS = 50V
8 VDS = 80V
6
4
2
0 *Note: ID =74A
0 20 40 60 80
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDB120N10 | N-Channel MOSFET | Fairchild Semiconductor |
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