|
FDB088N08 PDF даташит
| Спецификация FDB088N08 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
|
|
Детали детали
| Номер произв | FDB088N08 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
March 2009
FDB088N08
N-Channel PowerTrench® MOSFET
75V, 85A, 8.8mΩ
tm
Features
• RDS(on) = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
DD
GS
D2-PAK
FDB Series
G
S
Absolute
www.DataSheet4U.com
Maximum
Ratings
TC =
25oC
unless
otherwise
noted*
Symbol
Parameter
FDB088N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC,
100oC,
25oC,
Silicon Limited)
Silicon Limited)
Package Limited)
75
±20
85*
60
75
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
340
309
6.3
160
1.06
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.94
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. A
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB088N08
Device
FDB088N08
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
ID = 250μA, Referenced to 25oC
VDS = 75V, VGS = 0V
VDS = 75V, TC = 150oC
VGS = ±20V, VDS = 0V
75
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 75A
VDS = 10V, ID = 37.5A
(Note 4)
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 60V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 37.5V, ID = 75A
RGEN = 25Ω, VGS = 10V
(Note 4, 5)
-
-
-
-
www.DataSDhreaeti4nU-S.coomurce Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.11mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.07
-
-
-
-
7.3
300
4960
355
200
91
22
28
45
158
244
102
-
-
-
41.1
80.7
Quantity
800
Max. Units
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
8.8 mΩ
-S
6595
470
300
118
-
-
pF
pF
pF
nC
nC
nC
100 ns
326 ns
498 ns
214 ns
85 A
340 A
1.25 V
- ns
- nC
FDB088N08 Rev. A
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
2
0.2
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.020
0.015
0.010
VGS = 10V
VGS = 20V
www.DataSheet4U.c0o.0m05
0
*Note: TC = 25oC
100 200
ID, Drain Current [A]
300
Figure 5. Capacitance Characteristics
8000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
4000
2000
Coss
Crss
*Notes:
1. VGS = 0V
2. f = 1MHz
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
500
100
175oC
25oC
10 -55oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
234567
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100 175oC
25oC
10
3
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.8 1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
VDS = 15V
8
VDS = 37.5V
VDS = 60V
6
4
2
*Note: ID = 75A
0
0 20 40 60 80 100
Qg, Total Gate Charge [nC]
FDB088N08 Rev. A
3 www.fairchildsemi.com
Скачать PDF:
[ FDB088N08.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FDB088N08 | N-Channel MOSFET | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |