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FDB031N08 PDF даташит
| Спецификация FDB031N08 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDB031N08 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
July 2008
FDB031N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.1mΩ
tm
Features
• RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
D2-PAK
G S FDB Series
G
S
www.DatMaSOheSet4FUE.cTomMaximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
FDB031N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
75
±20
235*
165*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
940
1995
5.5
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. A3
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB031N08
Device
FDB031N08
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 75V, VGS = 0V
VDS = 75V, TC = 150oC
VGS = ±20V, VDS = 0V
75
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 60V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 37.5V, ID = 75A
RGEN = 25Ω, VGS = 10V
(Note 4, 5)
-
-
-
-
www.DatDaSraheinet-4SUo.cuormce Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ. Max. Units
-
0.05
-
-
-
-
-
1
500
±100
V
V/oC
µA
nA
3.5 4.5 V
2.4 3.1 mΩ
180 - S
11400
1360
595
169
60
47
15160
1810
800
220
-
-
pF
pF
pF
nC
nC
nC
230 470 ns
191 392 ns
335 680 ns
121 252 ns
- 235 A
- 940 A
- 1.3 V
53 - ns
77 - nC
FDB031N08 Rev. A3
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0030
0.0025
VGS = 10V
VGS = 20V
www.DataSheet4U.com
0.0020
0
*Note: TC = 25oC
100 200 300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
100000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10000
1000
Ciss
Coss
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
100
0.1
1 10
VDS, Drain-Source Voltage [V]
80
FDB031N08 Rev. A3
Figure 2. Transfer Characteristics
500
100
175oC
-55oC
25oC
10
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
2468
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
VDS = 37.5V
8 VDS = 60V
6
4
2
*Note: ID = 75A
0
0 50 100 150 200
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com
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| FDB031N08 | N-Channel MOSFET | Fairchild Semiconductor |
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