|
FDB024N06 PDF даташит
| Спецификация FDB024N06 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET». |
|
|
Детали детали
| Номер произв | FDB024N06 |
| Описание | N-Channel PowerTrench MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
July 2008
FDB024N06
N-Channel PowerTrench® MOSFET
60V, 265A, 2.4mΩ
tm
Features
• RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
GS
D2-PAK
FDB Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataShSeyemt4bUo.cl om
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
Drain Current
-
ID -
-
Parameter
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
Ratings
60
±20
265*
190*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
1060
2531
3.5
395
2.6
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.38
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB024N06 Rev. A3
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB024N06
Device
FDB024N06
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to 25oC
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
60
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
-
-
-
-
www.DatDaSraheinet-4SUo.cuormce Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ. Max. Units
-
0.04
-
-
-
-
-
1
500
±100
V
V/oC
µA
nA
3.5 4.5 V
1.8 2.4 mΩ
200 - S
11190
1610
750
174
54
50
14885
2140
1125
226
-
-
pF
pF
pF
nC
nC
nC
134 278 ns
324 658 ns
348 706 ns
250 510 ns
- 265 A
- 1060 A
- 1.3 V
69 - ns
152 - nC
FDB024N06 Rev. A3
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
www.DataSheet4U.com
1.0
0
VGS = 20V
*Note: TC = 25oC
100 200 300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
16000
12000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
8000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
60
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100 175oC
25oC
10 -55oC
1
234567
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
175oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
8
VDS = 30V
VDS = 48V
6
4
2
*Note: ID = 75A
0
0 40 80 120 160 200
Qg, Total Gate Charge [nC]
FDB024N06 Rev. A3
3 www.fairchildsemi.com
Скачать PDF:
[ FDB024N06.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FDB024N04AL7 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| FDB024N06 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| FDB024N08BL7 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |