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FDA24N50 PDF даташит
| Спецификация FDA24N50 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDA24N50 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
FDA24N50
N-Channel MOSFET
500V, 24A, 0.19Ω
Features
• RDS(on) = 0.16Ω ( Typ.)@ VGS = 10V, ID = 12A
• Low gate charge ( Typ. 65nC)
• Low Crss ( Typ. 35pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
August 2008
UniFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
500
±30
24
14
96
1872
24
2.7
4.5
270
2.2
-55 to +150
300
Ratings
0.46
0.24
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDA24N50 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Package Marking and Ordering Information
Device Marking
FDA24N50
Device
FDA24N50
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 12A
VDS = 20V, ID = 12A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 24A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 24A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 24A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 24A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.66
-
-
-
-
0.16
28
3120
460
35
65
18
26
47
108
164
86
-
-
-
540
8.1
Max. Units
-
-
1
10
±100
V
V/oC
μA
nA
5.0 V
0.19 Ω
-S
4150
615
52
85
-
-
pF
pF
pF
nC
nC
nC
104 ns
226 ns
338 ns
182 ns
24 A
96 A
1.4 V
- ns
- μC
FDA24N50 Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
60 VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
10 5.5 V
1
0.5
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.35
0.30
0.25
0.20
0.15
VGS = 10V
VGS = 20V
0.10
0
*Note: TJ = 25oC
20 40 60
ID, Drain Current [A]
80
Figure 5. Capacitance Characteristics
7500
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4500
*Note:
1. VGS = 0V
2. f = 1MHz
3000
Ciss
1500
Coss
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
100
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
150
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.2 0.6 1.0 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 24A
0
0 20 40 60 70
Qg, Total Gate Charge [nC]
FDA24N50 Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| FDA24N50 | N-Channel MOSFET | Fairchild Semiconductor |
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