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FDA24N40F PDF даташит
| Спецификация FDA24N40F изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDA24N40F |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
FDA24N40F
N-Channel MOSFET, FRFET
400V, 23A, 0.19Ω
Features
• RDS(on) = 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A
• Low gate charge (Typ. 46nC)
• Low Crss (Typ.25pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt apability
• RoHS compliant
December 2007
UniFETTM
tm
Descripition
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
400
±30
23
13.8
92
1190
23
23.5
4.5
235
1.8
-55 to +150
300
Min.
-
0.24
-
Max.
0.53
-
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDA24N40F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDA24N40F
Device
FDA24N40F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 400V, VGS = 0V
VDS = 320V, TC = 125oC
VGS = ±30V, VDS = 0V
400
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 11.5A
VDS = 20V, ID = 11.5A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V
ID = 23A
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS = 200V, ID = 23A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 23A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 23A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 4.5mH, IAS = 23A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
3: ISD ≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.5
-
-
-
-
0.15
29
2280
370
25
46
13
18
40
92
120
75
-
-
-
110
0.3
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
0.19 Ω
-S
3030
490
38
60
-
-
pF
pF
pF
nC
nC
nC
90 ns
195 ns
250 ns
160 ns
23 A
92 A
1.5 V
- ns
- µC
FDA24N40F Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
70 VGS = 15.0V
10.0V
8.0 V
7.0 V
10 6.5 V
6.0 V
5.5 V
1
0.1
0.02
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10 15
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.36
0.32
0.28
0.24
0.20
VGS = 10V
VGS = 20V
0.16
0.12
0
*Note: TJ = 25oC
20 40 60
ID, Drain Current [A]
80
Figure 5. Capacitance Characteristics
5000
4000
3000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
2000
1000
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
100
10 150oC
25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8
VDS = 200V
VDS = 320V
6
4
2
*Note: ID = 23A
0
0 10 20 30 40 50
Qg, Total Gate Charge [nC]
FDA24N40F Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| FDA24N40F | N-Channel MOSFET | Fairchild Semiconductor |
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