FDA032N08 PDF даташит

Спецификация FDA032N08 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET».

Детали детали

Номер произв	FDA032N08
Описание	N-Channel PowerTrench MOSFET
Производители	Fairchild Semiconductor
логотип

8 Pages

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January 2009

FDA032N08

N-Channel PowerTrench® MOSFET

75V, 235A, 3.2mΩ

Features

• RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s adcanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

G DS

TO-3PN

MOSFET

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Maximum

Ratings

TC =

25oC

unless

otherwise

noted*

Symbol

Parameter

FDA032N08

VDSS

VGSS

IDM

EAS

dv/dt

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC, Silicon Limited)

-Continuous (TC = 100oC, Silicon Limited)

-Continuous (TC = 25oC, Package Limited)

- Pulsed

(Note 1)

Single Pulsed Avalanche Energy

(Note 2)

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

(Note 3)

±20

235*

165*

120

940

1995

5.5

375

2.5

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

-55 to +175

300

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

Ratings

0.4

0.24

Units

V/ns

W/oC

Units

oC/W

FDA032N08 Rev. A

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDA032N08

Device

FDA032N08

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics

Symbol

Parameter

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Qgd Gate to Drain “Miller” Charge

Test Conditions

Min.

ID = 250μA, VGS = 0V, TC = 25oC

ID = 250μA, Referenced to 25oC

VDS = 75V, VGS = 0V

VDS = 75V, TC = 150oC

VGS = ±20V, VDS = 0V

VGS = VDS, ID = 250μA

VGS = 10V, ID = 75A

VDS = 20V, ID = 75A

(Note 4)

2.5

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 60V, ID = 75A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 37.5V, ID = 75A

RGEN = 25Ω, VGS = 10V

www.DataSDhreaeti4nU-S.coomurce Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 75A

dIF/dt = 100A/μs

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

(Note 4, 5)

(Note 4)

Typ. Max. Units

0.05

500

±100

V/oC

μA

3.5 4.5 V

2.5 3.2 mΩ

180 - S

11400

1360

595

169

15160

1810

800

220

230 470 ns

191 392 ns

335 680 ns

121 252 ns

- 235 A

- 940 A

- 1.3 V

53 - ns

77 - nC

FDA032N08 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

3000

1000

100

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

0.1

0.01

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

0.1

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

0.0030

0.0025

VGS = 10V

VGS = 20V

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0.0020

*Note: TC = 25oC

100 200 300

ID, Drain Current [A]

400

Figure 5. Capacitance Characteristics

100000

10000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Ciss

Coss

*Note:

1. VGS = 0V

2. f = 1MHz

1000

Crss

100

0.1

1 10

VDS, Drain-Source Voltage [V]

FDA032N08 Rev. A

Figure 2. Transfer Characteristics

500

100

175oC

-55oC

25oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

2468

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

400

100

175oC

25oC

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

0.0 0.5 1.0 1.5

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 15V

VDS = 37.5V

8 VDS = 60V

*Note: ID = 75A

0 50 100 150 200

Qg, Total Gate Charge [nC]

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FDA032N08	N-Channel PowerTrench MOSFET	Fairchild Semiconductor

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