FCPF9N60NT PDF даташит

Спецификация FCPF9N60NT изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FCPF9N60NT
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FCP9N60N / FCPF9N60NT

N-Channel MOSFET

600V, 9A, 0.385Ω

Features

• RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A

• Ultra low gate charge ( Typ. Qg = 22nC)

• Low effective output capacitance

• 100% avalanche tested

• RoHS compliant

August 2009

SupreMOSTM

Description

The SupreMOS MOSFET, Fairchild’s next generation of high

voltage super-junction MOSFETs, employs a deep trench filling

process that differentiates it from preceding multi-epi based

technologies. By utilizing this advanced technology and precise

process control, SupreMOS provides world class Rsp, superior

switching performance and ruggedness.

This SupreMOS MOSFET fits the industry’s AC-DC SMPS

requirements for PFC, server/telecom power, FPD TV power,

ATX power, and industrial power applications.

GDS

TO-220

FCP Series

GD S

TO-220F

FCPF Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol

VDSS

www.DataSVheGeStS4U.com

IDM

EAS

IAR

EAR

dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

MOSFET dv/dt Ruggedness

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

(Note 1)

(Note 2)

(Note 3)

FCP9N60N FCPF9N60NT

600

±30

9.0 9.0*

5.7 5.7*

27 27*

135

0.83

100

83.3 29.8

0.67 0.24

-55 to +150

300

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Heat Sink (Typical)

Thermal Resistance, Junction to Ambient

FCP9N60N

1.5

0.5

62.5

FCPF9N60NT

4.2

0.5

62.5

Units

V/ns

W/oC

Units

oC/W

FCP9N60N / FCPF9N60NT Rev. A

www.fairchildsemi.com

No Preview Available !

Package Marking and Ordering Information

Device Marking

FCP9N60N

FCPF9N60NT

Device

FCP9N60N

FCPF9N60NT

Package

TO-220

TO-220F

Reel Size

Tape Width

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 1mA, VGS = 0V, TC = 25oC

ID = 1mA, Referenced to 25oC

VDS = 480V, VGS = 0V

VDS = 480V, VGS = 0V, TC = 125oC

VGS = ±30V, VDS = 0V

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250μA

VGS = 10V, ID = 4.5A

VDS = 40V, ID = 4.5A

Dynamic Characteristics

Ciss

Coss

Crss

Coss

Cosseff.

Qg(tot)

Qgs

Qgd

ESR

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Equivalent Series Resistance (G-S)

VDS = 100V, VGS = 0V

f = 1MHz

VDS = 380V, VGS = 0V, f = 1MHz

VDS = 0V to 480V, VGS = 0V

VDS = 380V, ID = 4.5A,

VGS = 10V

Drain Open

(Note 4)

Min.

600

2.0

Switching Characteristics

td(on)

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td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 380V, ID = 4.5A

RG = 4.7Ω

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 4.5A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 4.5A

dIF/dt = 100A/μs

(Note 4)

Typ.

0.72

0.33

7.5

930

106

22.0

4.1

7.1

2.9

12.7

8.7

36.9

10.2

213

2.2

Quantity

Max. Units

100

±100

V/oC

μA

4.0

0.385

1240

35.4

27.4

83.8

30.4

9.0 A

27 A

1.2 V

- ns

- μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FCP9N60N / FCPF9N60NT Rev. A

www.fairchildsemi.com

No Preview Available !

Typical Performance Characteristics

Figure 1. On-Region Characteristics

100

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

10 6.0 V

5.5 V

5.0 V

0.1

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

1 10 20

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

1.2

1.0

0.8

0.6 VGS = 10V

VGS = 20V

0.4

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0.2

*Notes: TC = 25oC

5 10 15 20 25

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

5000

4000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

3000

Coss

*Notes:

1. VGS = 0V

2. f = 1MHz

2000

1000

0.1

Ciss

Crss

1 10 100

VDS, Drain-Source Voltage [V]

600

Figure 2. Transfer Characteristics

150oC

25oC

-55oC

0.1

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

VGS, Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

100

150oC

25oC

*Notes:

1. VGS = 0V

1 2. 250μs Pulse Test

0.4 0.6 0.8 1.0 1.2 1.4

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 120V

VDS = 300V

VDS = 480V

0 *Notes: ID = 4.5A

0 5 10 15 20 25

Qg, Total Gate Charge [nC]

FCP9N60N / FCPF9N60NT Rev. A

www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FCPF9N60NT	N-Channel MOSFET	Fairchild Semiconductor

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