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FCA47N60F PDF даташит
| Спецификация FCA47N60F изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «600V N-Channel MOSFET». |
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Детали детали
| Номер произв | FCA47N60F |
| Описание | 600V N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
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FCA47N60F
600V N-Channel MOSFET, FRFET
SuperFETJanuary 2009
TM
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.062Ω
• Fast Recovery Type ( trr = 240ns)
• Ultra Low Gate Charge (typ. Qg = 210nC)
• Low Effective Output Capacitance (typ. Cosseff. = 420pF)
• 100% avalanche tested
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G DS
TO-3PN
FCA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
www.DataSheet4U.com
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
©2009 Fairchild Semiconductor Corporation
FCA47N60F Rev. A
1
G
S
FCA47N60F
600
47
29.7
141
± 30
1800
47
41.7
50
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ.
--
0.24
--
Max.
0.3
--
41.7
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
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Package Marking and Ordering Information
Device Marking
FCA47N60F
Device
FCA47N60F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
VGS = 0V, ID = 250μA, TJ = 150°C
ID = 250μA, Referenced to 25°C
VGS = 0V, ID = 47A
600
--
--
--
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 23.5A
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 23.5A
(Note 4) --
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
--
--
--
--
--
td(on)
Turn-On Delay Time
www.DataShteret4U.com Turn-On Rise Time
VDD = 300V, ID = 47A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 480V, ID = 47A
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 47A, di/dt ≤ 1,200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
650
0.6
700
--
--
--
--
--
0.062
40
5900
3200
250
160
420
185
210
520
75
210
38
110
--
--
--
240
2.04
Max Units
-- V
-- V
-- V/°C
--
10
100
100
-100
V
μA
μA
nA
nA
5.0
0.073
--
V
Ω
S
8000
4200
--
--
--
pF
pF
pF
pF
pF
430
450
1100
160
270
--
--
ns
ns
ns
ns
nC
nC
nC
47 A
141 A
1.4 V
-- ns
-- μC
2 www.fairchildsemi.com
FCA47N60F Rev. A
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
102 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
* Notes :
1. 250μs Pulse Test
2. T = 25oC
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
102
101
100
2
150°C
25°C
-55°C
- Note
1. V = 40V
DS
2. 250μs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
0.15
VGS = 10V
0.10
VGS = 20V
0.05
*
Note
:
T
J
=
25°C
0.00
0
20 40 60 80 100 120 140 160 180 200
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ID, Drain Current [A]
101
100
0.2
150°C
25°C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-Drain Voltage [V]
1.6
Figure 5. Capacitance Characteristics
25000
20000
15000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10000
Ciss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
5000
0
10-1
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10 V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 47A
D
0
0 50 100 150 200 250
Q , Total Gate Charge [nC]
G
3 www.fairchildsemi.com
FCA47N60F Rev. A
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