FCA35N60 PDF даташит

Спецификация FCA35N60 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «600V N-Channel MOSFET».

Детали детали

Номер произв	FCA35N60
Описание	600V N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FCA35N60

600V N-Channel MOSFET

Features

• 650V @ TJ = 150°C

• Typ.RDS(on) = 0.079Ω

• Ultra low gate charge ( Typ. Qg = 139nC )

• Low effective output capacitance ( Typ. Coss.eff = 340pF )

• 100% avalanche tested

March 2009

SuperFETTM

Description

SuperFETTM is Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge bal-

ance mechanism for outstanding low on-resistance and lower

gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

G DS

TO-3PN

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol

VDSS

www.DataSVheGeStS4U.com

IDM

EAS

IAR

EAR

dv/dt

Parameter

Drain to Source Voltage

Gate-Soure voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case-to-Heat Sink

Thermal Resistance, Junction to Ambient

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Ratings

600

±30

22.2

105

1455

31.25

312.5

2.5

-55 to +150

300

Typ.

0.24

Max.

0.4

Units

V/ns

W/oC

Units

oC/W

FCA35N60 Rev. A

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FCA35N60

Device

FCA35N60

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics

Symbol

Parameter

Off Characteristics

BVDSS

∆BVDSS

/ ∆TJ

BVDS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Drain-Source Avalanche Breakdown

Voltage

IDSS

IGSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

Dynamic Characteristics

Ciss

Coss

Crss

Coss

Coss eff.

Qgs

Qgd

ESR

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Equivalent Series Resistance (G-S)

Test Conditions

Min.

ID = 250µA, VGS = 0V, TJ = 25oC

ID = 250µA, VGS = 0V, TJ = 150oC

ID = 250µA, Referenced to 25oC

VGS = 0V, ID = 16A

VDS = 600V, VGS = 0V

VDS = 480V, TC = 125oC

VGS = ±30V, VDS = 0V

600

VGS = VDS, ID = 250µA

VGS = 10V, ID = 17.5A

VDS = 40V, ID = 17.5A

3.0

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 480V, VGS = 0V, f = 1.0MHz

VDS = 0V to 480V, VGS = 0V

VDS = 480V, ID = 35A

VGS = 10V

Drain Open, F= 1MHZ

(Note 4)

www.DataSShweeitt4cUh.cinomg Characteristics

td(on)

Turn-On Delay Time

tr Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf Turn-Off Fall Time

VDD = 300V, ID = 35A

RG = 4.7Ω

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 35A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 35A

dIF/dt = 100A/µs

(Note 4)

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4: Essentially Independent of Operating Temperature Typical Characteristics

Typ. Max. Units

- -V

650 - V

0.6 - V/oC

700 - V

µA

- ±100 nA

0.079

28.8

5.0

0.098

Ω

4990

2380

140

113

340

139

1.4

6640

3170

181

Ω

34 78 ns

120 250 ns

105 220 ns

73 155 ns

- 35 A

- 105 A

- 1.4 V

614 - ns

16.3 - µC

FCA35N60 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

200

VGS = 15.0 V

100 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

0.3

0.1

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

1 10 20

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

0.24

0.20

0.16

0.12

0.08

www.DataSheet4U.co0.m04

VGS = 10V

VGS = 20V

*Note: TC = 25oC

25 50 75 100

ID, Drain Current [A]

125

Figure 5. Capacitance Characteristics

50000

10000

Ciss

1000

*Note:

1. VGS = 0V

100 2. f = 1MHz

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

0.1 1

10 100

VDS, Drain-Source Voltage [V]

Coss

Crss

600

Figure 2. Transfer Characteristics

200

100

150oC

-55oC

25oC

*Notes:

1. VDS = 20V

2. 250µs Pulse Test

456789

VGS, Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

500

100

150oC

25oC

*Notes:

1. VGS = 0V

0.2 0.4

2. 250µs Pulse Test

0.8 1.2 1.6

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 100V

VDS = 250V

8 VDS = 400V

0 *Note: ID = 35A

0 40 80 120 160

Qg, Total Gate Charge [nC]

FCA35N60 Rev. A

3 www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FCA35N60	600V N-Channel MOSFET	Fairchild Semiconductor

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