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TA4500F PDF даташит

Спецификация TA4500F изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «1.9 GHz Band RX Front-End IC».

Детали детали

Номер произв TA4500F
Описание 1.9 GHz Band RX Front-End IC
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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TA4500F Даташит, Описание, Даташиты
TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic
TA4500F
1.9 GHz Band RX Front-End IC
PHS, Digital Cordless Telecommunication Applications
TA4500F
Features
Low-noise amplifier / down-conversion mixer
Integrated local buffer amplifier
Single positive power supply: VCC = 3.0 V
Large conversion gain: GLNA = 17.5 dB (typ.)
GMIX = 5.0 dB (typ.)
High input IP3:
IIP3LNA = -7.5 dBmW (typ.)
IIP3MIX = 7.0 dBmW (typ.)
High 1/2 IF reduction ratio: 1/2IFRMIX = 45 dB (typ.)
Small package: QS16 (2.5 mm × 2.5 mm × 0.55 mm)
QS16
Weight: 0.0065 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
Input power
Power dissipation
www.DataShOepeetr4aUti.ncgomtemperature range
Storage temperature range
VCC (Note 1)
PIN (RF_IN)
PIN (LO_IN)
PIN (MIX_IN)
Pd (Note 2)
Topr
Tstg
4.5
10
0
0
500
40 to +85
55 to +150
V
dBmW
dBmW
dBmW
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = VCC1 = VCC2 = VCC3
Note 2: When mounted on a 30 mm × 35 mm × 0.6 mm FR4 substrate at Ta = 25°C (double-sided substrate: the
reverse side is ground connection)
Caution
This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected
against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
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TA4500F Даташит, Описание, Даташиты
TA4500F
Electrical Characteristics
VCC = 3.0 V, Ta = 25°C, Zg = Zl = 50
Characteristic
Symbol
Test Condition
Min
Total
Operating frequency
f
Operating supply voltage
VCC
Supply current
ICC pRF_IN = pLO_IN = pMIX_IN = 0 mW (no signal)
Low Noise Amplifier (LNA) Block
Power gain
GLNA fRF_IN = 1.9 GHz, pRF_IN = -35 dBmW
Noise figure
NFLNA Measured at 1.9 GHz
Input IP3
IIP3LNA (Note 3)
Down Conversion Mixer (MIX) Block
Conversion gain
GMIX
fMIX_IN = 1.9 GHz, pMIX_IN = -25 dBmW,
fLO_IN = 1.66 GHz, pLO_IN = -15 dBmW,
measured at IF_OUT1, IF_OUT2 terminated via 50
and vice versa
Noise figure
NFMIX
fLO_IN = 1.66 GHz, pLO_IN = -15 dBmW,
measured at IF_OUT1, IF_OUT2 terminated via 50
and vice versa, fIF_OUT = 240 MHz, DSB (Note 4)
Input IP3
IIP3MIX
fLO_IN = 1.66 GHz, pLO_IN = -15 dBmW,
measured at IF_OUT1, IF_OUT2 terminated via 50
and vice versa (Note 5)
1/2 IF reduction ratio
1/2IFRMIX
fMIX_IN = 1.9 GHz, 1.78 GHz, pMIX_IN = -25 dBmW,
fLO_IN = 1.66 GHz, pLO_IN = -15 dBmW,
measured at IF_OUT1, IF_OUT2 terminated via 50
and vice versa, fIF_OUT = 240 MHz
Local leak power
PLK
fLO_IN = 1.66 GHz, pLO_IN = -15 dBmW, measured
at MIX_IN, IF_OUT1, 2 terminated via 50
1.884
2.7
15.0
-13.5
2.8
-1.0
Typ
3.0
15.0
17.5
2.2
-7.5
5.0
13.0
7.0
45.0
-40.0
Max Unit
1.920
3.3
22.0
GHz
V
mA
22.0 dB
3.0 dB
dBmW
7.0 dB
17.5 dB
dBmW
dB
dBmW
Note 3: IIP3 of the LNA block is converted from IM3 when RF1 = 1.900 GHz / 35 dBmW, RF2 = 1.9006 GHz / 35
dBmW are input to RF_IN.
www.DataShNeoette4U4.:comMeasured with the high pass filter shown below connected to MIX_IN.
2.4 pF 2.4 pF
12 nH
4.7 nH 12 nH
-0.8 dB
10 dB / 100 MHz
850 MHz
Frequency
Note 5: IIP3 of the MIX block is converted from IM3 when RF1 = 1.900 GHz / 25 dBmW, RF2 = 1.9006 GHz / 25
dBmW are input to MIX_IN.
Note 6: All tests for electrical characteristics are performed using the test board shown on page 4.
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TA4500F Даташит, Описание, Даташиты
Block Diagram and Marking (Top View)
TA4500F
12
13
9
8
12 9
13
MD
Product marking
8
16
1
5
4
16
1
5
Monthly dot marking
4
Year dot marking
Pin 1 marking
Pin Configuration
Pin number
1
2
3
4
5
6
7
8
9
www.DataSheet4U1.0com
11
12
13
14
15
16
Pin name
N.C.
LO_term
LO_IN
GND1
GND2
VCC2
IF_OUT2
IF_OUT1
MIX_IN
VCC1
LNA_ind
LNA_OUT
GND3
RF_IN
GND4
VCC3
Description
Not connected to the pellet. Connect to ground.
MIX local input termination pin. To be terminated.
MIX local input
Ground.
Ground.
Supply pin for MIX.
MIX IF output. Biasing circuit is necessary.
MIX IF output. Biasing circuit is necessary.
MIX RF input.
Supply pin for LNA and biasing circuits.
LNA emitter. Connect to ground via 1 nH inductance // 1 pF capacitance.
LNA output. Biasing circuit is necessary.
Ground.
LNA input.
Ground.
Supply pin for MIX.
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TA4500F1.9 GHz Band RX Front-End ICToshiba Semiconductor
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