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IGW75N60T PDF даташит
| Спецификация IGW75N60T изготовлена «Infineon Technologies» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
| Номер произв | IGW75N60T |
| Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
| Производители | Infineon Technologies |
| логотип |  |
12 Pages
No Preview Available ! |
IGW75N60T
TRENCHSTOP™ Series
q
Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO247-3
Type
IGW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
G75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
150
75
225
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.6 20.09.2013
No Preview Available ! |
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
IGW75N60T
TRENCHSTOP™ Series
q
Symbol
RthJC
RthJA
Conditions
Max. Value
0.35
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=75A
Tj=25C
Tj=175C
IC=1.2mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=75A
min.
600
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
4.9
-
-
-
41
-
Unit
max.
-V
2.0
-
5.7
µA
40
5000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=75A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
T j 150C
-
-
-
-
-
-
4620
288
137
470
13
687.5
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.6 20.09.2013
No Preview Available ! |
IGW75N60T
TRENCHSTOP™ Series
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy1)
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW75N60T
min.
-
-
-
-
-
-
-
Value
Typ.
33
36
330
35
2.0
2.5
4.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy1)
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW75N60T
min.
-
-
-
-
-
-
-
Value
Typ.
32
37
363
38
2.9
2.9
5.8
Unit
max.
- ns
-
-
-
- mJ
-
-
IFAG IPC TD VLS
3
Rev. 2.6 20.09.2013
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