|
IGW60T120 PDF даташит
| Спецификация IGW60T120 изготовлена «Infineon Technologies» и имеет функцию, называемую «Low Loss IGBT». |
|
|
Детали детали
| Номер произв | IGW60T120 |
| Описание | Low Loss IGBT |
| Производители | Infineon Technologies |
| логотип |  |
12 Pages
No Preview Available ! |
TrenchStop® Series
IGW60T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Best in class TO247
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW60T120 1200V 60A
1.7V
150°C G60T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 90°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
100
60
150
150
±20
10
375
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09
No Preview Available ! |
TrenchStop® Series
IGW60T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
0.33
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=3.0mA
VGE = 15V, IC=60A
Tj=25°C
Tj=125°C
Tj=150°C
IC=2.0mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=60A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.9
2.1
2.3
5.8
-
-
-
30
4
Unit
max.
-V
2.4
-
-
6.5
mA
0.6
6.0
600 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=60A
VGE=15V
VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
3700
180
150
280
13
300
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.4 Nov. 09
No Preview Available ! |
TrenchStop® Series
IGW60T120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=60A,
VGE=0/15V,
RG=10Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
50
44
480
80
4.3
5.2
9.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=600V,IC=60A,
VGE=0/15V,
RG= 10Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
50
45
600
130
6.4
9.4
15.8
Unit
max.
- ns
-
-
-
- mJ
-
-
2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov. 09
Скачать PDF:
[ IGW60T120.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| IGW60T120 | Low Loss IGBT | Infineon Technologies |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |