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IGW15T120 PDF даташит
| Спецификация IGW15T120 изготовлена «Infineon Technologies» и имеет функцию, называемую «Low Loss IGBT». |
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Детали детали
| Номер произв | IGW15T120 |
| Описание | Low Loss IGBT |
| Производители | Infineon Technologies |
| логотип |  |
12 Pages
No Preview Available ! |
IGW15T120
^ TrenchStop Series
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP313
C
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
IGW25T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
www.DaGtaaSthee-eet4mUi.tctoemr voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4515
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
30
15
45
45
±20
10
110
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
No Preview Available ! |
IGW15T120
^ TrenchStop Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
TO-247AC
Max. Value
1.1
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
www.DataSheet4U.com
Symbol
Conditions
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=15A
Tj=25°C
Tj=125°C
Tj=150°C
IC=0.6mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
VCE=0V,VGE=20V
VCE=20V, IC=15A
RGint
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
10
none
Unit
max.
-V
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
Power Semiconductors
2
Preliminary / Rev. 1 Jul-02
No Preview Available ! |
IGW15T120
^ TrenchStop Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
TO-247AC
VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
1100
100
50
85
-
90
- pF
-
-
- nC
13 nH
-A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=15A,
VGE=-15/15V,
RG=56Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Value
typ.
50
30
520
60
1.3
1.4
2.7
Unit
max.
- ns
-
-
-
- mJ
-
-
www.DaStawShiteceht4iUn.gcoCmharacteristic, Inductive Load, at Tj=150 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C,
VCC=600V,IC=15A,
VGE=-15/15V,
RG= 56Ω
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Value
typ.
50
35
600
120
2.0
2.1
4.1
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
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| Номер в каталоге | Описание | Производители |
| IGW15T120 | Low Loss IGBT | Infineon Technologies |
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