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AOZ8900 PDF даташит
| Спецификация AOZ8900 изготовлена «Alpha & Omega Semiconductors» и имеет функцию, называемую «Ultra-Low Capacitance TVS Diode Array». |
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Детали детали
| Номер произв | AOZ8900 |
| Описание | Ultra-Low Capacitance TVS Diode Array |
| Производители | Alpha & Omega Semiconductors |
| логотип |  |
9 Pages
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AOZ8900
Ultra-Low Capacitance TVS Diode Array
General Description
The AOZ8900 is a transient voltage suppressor array
designed to protect high speed data lines from Electro
Static Discharge (ESD) and lightning.
This device incorporates eight surge rated, low
capacitance steering diodes and a Transient Voltage
Suppressor (TVS) in a single package. During transient
conditions, the steering diodes direct the transient to
either the positive side of the power supply line or to
ground. They may be used to meet the ESD immunity
requirements of IEC 61000-4-2, Level 4 (±15kV air,
±8kV contact discharge).
The AOZ8900 comes in RoHS compliant SOT-23
package. It is rated over a -40°C to +85°C ambient
temperature range.
Features
● ESD protection for high-speed data lines:
– Exceeds: IEC 61000-4-2 (ESD) ±15kV (air),
±8kV (contact)
– IEC 61000-4-5 (Lightning) 5A (8/20µs)
– Human Body Model (HBM) ±15kV
● Small package saves board space
● Low insertion loss
● Protects four I/O lines
● Low clamping voltage
● Low operating voltage: 5.0V
Applications
● USB 2.0 Power and Data Line Protection
● Video Graphics Cards
● Monitors and Flat Panel Displays
● Digital Video Interface (DVI)
Typical Application
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USB Host
Controller
RT
RT
VBUS
AOZ8900
Downstream
+5V Ports
VBUS
D+
D-
GND
RT
RT
Figure 1. 2 USB High Speed Ports
+5V
VBUS
D+
D-
GND
Rev. 1.7 October 2008
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Page 1 of 9
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AOZ8900
Ordering Information
Part Number
AOZ8900CI
Ambient Temperature Range
-40°C to +85°C
Package
SOT23-6
Environmental
RoHS Compliant
All AOS products are offered in packages with Pb-free plating and compliant to RoHS standards.
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.
Pin Configuration
CH1 1
6 CH4
VN 2
5 VP
CH2 3
SOT23-6
(Top View)
4 CH3
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
VP – VN
Peak Pulse Current (IPP), tP = 8/20µs
Peak Power Dissipation (8 x 20µs@ 25°C)
Storage Temperature
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(TS)
ESD Rating per IEC61000-4-2,
contact(1)
ESD Rating per IEC61000-4-2, air(2)
ESD Rating per Human Body Model(2)
Junction Temperature (TJ)
Notes:
1. IEC 61000-4-2 discharge with CDischarge = 150pF, RDischarge = 330Ω.
2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100pF, RDischarge = 1.5kΩ.
Rating
6V
5A
50W
-65°C to +150°C
±8kV
±15kV
±15kV
-40°C to +125°C
Rev. 1.7 October 2008
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AOZ8900
Electrical Characteristics
TA = 25°C unless otherwise specified
Symbol
Parameter
VRWM
VBR
IR
VF
VCL
Cj
ΔCj
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Diode Forward Voltage
Channel Clamp Voltage
Positive Transients
Negative Transient
Channel Clamp Voltage
Positive Transients
Negative Transient
Channel Clamp Voltage
Positive Transients
Negative Transient
Junction Capacitance
Channel Input Capacitance
Matching
Conditions
Between pin 5 and 2(4)
IT = 1mA, between pins 5 and 2(5)
VRWM = 5V, between pins 5 and 2
If = 15mA
GIPrPo=un1dA(3,)t(p6)(=8)100ns, any I/O pin to
GIPrPo=un5dA(3,)t(p6)(=8)100ns, any I/O pin to
GIPrPo=un1d2(3A),(6t)p(8=) 100ns, any I/O pin to
VR = 0V, f = 1Mhz, any I/O pin to Ground(3)(7)
VR = 0V, f = 1Mhz, between I/O pins(3)(7)
Min.
6.6
0.7
Typ.
0.85
1.25
Max.
5.5
1
0.95
10.50
-2.00
12.50
-3.50
15.50
-5.00
1.3
0.03
Notes:
3. These specifications are guaranteed by design.
4. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
5. VBR is measured at the pulse test current IT.
6. Measurements performed with no external capacitor on VP (Pin 5 floating).
7. Measurements performed with VP biased to 3.3 Volts (Pin 5 @ 3.3V).
8. Measurements performed using a 100 nSec Transmission Line Pulse (TLP) system.
Units
V
V
µA
V
V
V
V
V
V
V
pF
pF
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Rev. 1.7 October 2008
www.aosmd.com
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