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7MBR35SD120 PDF даташит
| Спецификация 7MBR35SD120 изготовлена «Fuji Electric» и имеет функцию, называемую «PIM/Built-in converter». |
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Детали детали
| Номер произв | 7MBR35SD120 |
| Описание | PIM/Built-in converter |
| Производители | Fuji Electric |
| логотип |  |
7 Pages
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7MBR35SD120
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 35A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
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-IC
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Junction temperature (except Thyristor)
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
Condition
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
1200
±20
50
35
100
70
35
240
1200
±20
35
25
70
50
180
1200
1600
1600
35
390
125
1600
35
360
648
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
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IGBT Module
7MBR35SD120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
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B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
VGE=15V, Ic=35A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=35A
VGE=±15V
RG=33Ω
IF=35A
chip
terminal
IF=35A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=600V
IC=25A
VGE=±15V
RG=51Ω
VR=1200V
VDM=1600V
VRM=1600V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=35A
chip
terminal
IF=35A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min. Typ. Max.
200
200
5.5 7.2
8.5
2.1
2.25 2.7
4200
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
2.3
2.45
3.3
350
200
200
2.1
2.25
2.7
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
200
1.0
1.0
100
2.5
1.1 1.2
1.2
1.1
1.2 1.5
200
5000
465 495
520
3305
3375
3450
Unit
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Characteristics
Min.
Typ.
Max.
0.52
0.90
0.69
1.00
0.75
0.05
Unit
°C/W
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IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
7MBR35SD120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
80
Tj= 25°C
Tj= 125°C
60
40
20
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0
0
1234
Collector - Emitter voltage : VCE [ V ]
5
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
1000
Coes
Cres
100
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 70A
Ic= 35A
Ic= 17.5A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0 100 200 300 400
Gate charge : Qg [ nC ]
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| Номер в каталоге | Описание | Производители |
| 7MBR35SD120 | PIM/Built-in converter | Fuji Electric |
| Номер в каталоге | Описание | Производители |
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