2SA1993 PDF даташит

Спецификация 2SA1993 изготовлена «Isahaya Electronics Corporation» и имеет функцию, называемую «(2SAxxxx) SILICON PNP EPITAXIAL TYPE».

Детали детали

Номер произв	2SA1993
Описание	(2SAxxxx) SILICON PNP EPITAXIAL TYPE
Производители	Isahaya Electronics Corporation
логотип

5 Pages

No Preview Available !

2SA1993 Даташит, Описание, Даташиты

FEATURE

・ Super mini package for easy mounting

・Excellent linearity of DC forward gain

・Small collector to emitter saturation voltage

VCE(sat)=-0.3V max

APPLICATION

For Hybrid IC,small type machine low frequency

voltageAmplify application

< SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A

2SA1993

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

OUTLINE DRAWING

2SA1602A

2SA1235A

Unit：ｍｍ

2.1

0.425 1.25 0.425

2.5

0.5 1.5 0.5

①

②③

①

②③

www.DataSheet4U.com

JEITA：SC-70

JEDEC：－

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

JEITA：SC-59

JEDEC：TO-236 類似

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

2SA1993

4.0

0.1

0.45

1.27 1.27

ISAHAYA ELECTRONICS CORPORATION

①②③

JEITA：－

JEDEC：－

TERMINAL CONNECTER

①：EMITTER

②：COLLECTOR

③：BASE

No Preview Available !

2SA1993 Даташит, Описание, Даташиты

< SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A

2SA1993

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

MAXIMUM RATINGS（Ｔａ＝２５℃）

Symbol

ＶＣＢＯ

ＶＥＢＯ

ＶＣＥＯ

ＩＣ

ＰＣ

Ｔｊ

Ｔｓｔｇ

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter

voltage

Collector current

Collector dissipation

Junction temperature

Storage temperature

2SA1235A

-60

200

Ratings

2SA1602A

-60

-6

-50

200

200

+150

-55～+150

2SA1993

-50

450

Unit

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Parame

ter

Symbol

Test conditions

Ｖ（ＢＲ）ＣＥＯ

ＩＣＢＯ

Ｉ EＢＯ

ｈＦＥ*

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

DC forward current gain

I C=-100μA，RBE=∞

2SA1993

2SA1235A,2SA1602A

VEB=-6V，I C =0

VCE=-6V，I C =-1mA

VCB=-50V，I E =0

VCB=-60V，I E =0

ｈＦＥ C to E Saturation Vlotage

2SA1993

2SA1235A,2SA1602A

VCE=-6V，I C =-0.1mA

ＶＣＥ（ｓａｔ）

ｆＴ

Cob

NF

Gain bandwidth product

Collector output capacitance

C to E break down voltage

Noise figure

I C =-100mA，I B =-10mA

VCE=-6V，I E =10mA

VCB=-6V，I E =0,f=1MHz

VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ

*： It shows hFE classification in below table.

Limits

Min Typ Max

-50

-0.1

-0.1

-0.1

150 500

50

90

-0.3

200

4.0

20

Unit

V

μA

μA

－

－

－

V

MHz

pF

dB

ｈFE 2SA1235A

www.DataSheet4U.2cSoAm1602A

2SA1993

E

150～300

F

250～500

ISAHAYA ELECTRONICS CORPORATION

No Preview Available !

2SA1993 Даташит, Описание, Даташиты

2SA1235A、2SA1602

COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE

250

200

150

100

50

0

0 25 50 75 100 125 150

AMBIENT TEMPERTURE Ta (℃)

< SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A

2SA1993

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

2SA1993

COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE

500

400

300

200

100

0

0 25 50 75 100 125 150

AMBIENT TEMPERTURE Ta (℃)

www.DataSheet4U.com

ISAHAYA ELECTRONICS CORPORATION

Скачать PDF:

[ 2SA1993.PDF Даташит ]

Номер в каталоге	Описание	Производители
2SA1993	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO	ETC
2SA1993	(2SAxxxx) SILICON PNP EPITAXIAL TYPE	Isahaya Electronics Corporation

Номер в каталоге	Описание	Производители
TL431	100 мА, регулируемый прецизионный шунтирующий регулятор	Unisonic Technologies
IRF840	8 А, 500 В, N-канальный МОП-транзистор	Vishay
LM317	Линейный стабилизатор напряжения, 1,5 А	STMicroelectronics

DataSheet26.com | 2020 |

Контакты | Поиск