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AGR19030EF PDF даташит

Спецификация AGR19030EF изготовлена ​​​​«TriQuint Semiconductor» и имеет функцию, называемую «Transistor».

Детали детали

Номер произв AGR19030EF
Описание Transistor
Производители TriQuint Semiconductor
логотип TriQuint Semiconductor логотип 

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AGR19030EF Даташит, Описание, Даташиты
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
GSM Features
Typical performance over entire GSM band:
— P1dB: 30 W typical.
— Continuous wave (CW) power gain: @ P1dB =
15 dB.
— CW efficiency @ P1dB = 55% typical.
— Return loss: –12 dB.
Device Performance Features
Figure 1. AGR19030EF (flanged) Package
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 350 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
www.DataSheraett4ioU.(cAoCmPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 6 W.
— Power gain: 16 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49 dBc.
EDGE Features
Typical EDGE performance, 1960 MHz, 26 V,
IDQ = 250 mA:
— Output power (POUT): 12 W typical.
— Power gain: 15.5 dB.
— Efficiency: 38% typical.
— Modulation spectrum:
@ ±400 kHz = –61 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.2%
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19030EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
dtaukreinngtoallahvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.









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AGR19030EF Даташит, Описание, Даташиты
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Symbol
RθJC
Value
2.0
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C
Derate Above 25 °C
Operating Junction Temperature
Storage Temperature Range
Symbol
VDSS
VGS
PD
TJ
TSTG
Value
65
–0.5, 15
87.5
0.5
200
–65, 150
Unit
Vdc
Vdc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID =13580µA)
V(BR)DSS 65
——
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
IGSS
IDSS
— — 1 µAdc
— — 530 µAdc
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
Gate Threshold Voltage (VDS = 10 V, ID = 100 µA)
www.DataGSahteeetQ4Uu.iceosmcent Voltage (VDS = 28 V, ID = 300 mA)
Drain-source On-voltage (VGS = 10 V, ID = 0.4 A)
GFS — 2.4 — S
VGS(TH)
— 4.8
Vdc
VGS(Q)
— 3.8 —
Vdc
VDS(ON) — 0.3 —
Vdc









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AGR19030EF Даташит, Описание, Даташиты
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter
Dynamic Characteristics
Symbol Min Typ Max Unit
Reverse Transfer Capacitance
CRSS
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Functional Tests (in SAugpeprelieSdyTsetesmt FsixStuprep)lied Test Fixture)
0.8 —
pF
Common-source Amplifier Power Gain
(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)
Third-order Intermodulation Distortion
(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 integration BW centered at f1 – 2.5 MHz and
f2 + 2.5 MHz, referenced to the carrier channel power)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 integration BW centered at f1 – 2.5 MHz and
f2 + 2.5 MHz, referenced to the carrier channel power)
Output Power at 1 dB Gain Compression
(VDD = 28 V, POUT = 30 W CW, f = 1990 MHz, IDQ = 350 mA)
Input Return Loss
(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,
www.DataSfh1e=et41U9.3co0mMHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)
Ruggedness
(VDD = 28 V, POUT = 30 W CW, IDQ = 350 mA, f = 1930 MHz, VSWR =
10:1 [all phase angles])
GPS 15.5 16 — dB
η — 24.8 — %
IM3 — –34.5 — dBc
ACPR — –49.0 — dBc
P1dB
IRL
30 35 — W
— –12 — dB
Ψ No degradation in output
power.










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