RT2N65M PDF даташит
Спецификация RT2N65M изготовлена «Isahaya Electronics Corporation» и имеет функцию, называемую «COMPOUND TRANSISTOR». |
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Детали детали
Номер произв | RT2N65M |
Описание | COMPOUND TRANSISTOR |
Производители | Isahaya Electronics Corporation |
логотип |
4 Pages
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DESCRIPTION
RT2N65M is a composite transistor with built-in bias resistor
FEATURE
●Built-in bias resistor ( R1=10 KΩ)
●Mini package for easy mounting
APPLICATION
muting circuit、switching circuit
RT2N65M
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
①
2.1
1.25
②
③
Unit:mm
⑤
④
⑤④
RTr1
RTr2
R1 R1
① ②③
TERMINAL CONNECTOR
①:BASE1
②:EMITTER(COMMON)
③:BASE2
④:COLLECTOR2
⑤:COLLECTOR1
JEITA:-
JEDEC:-
MAXIMUM RATINGS (Ta=25℃)(RTr1、RTr2)
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I C Collector current
PC Collector dissipation(Total Ta=25℃)
Tj Junction temperature
Tstg Storage temperature
Ratings
40
40
20
400
150
+150
-55~+150
Unit MARKING
V ⑤④
V
V
mA
N625
mW
℃
℃ ①②③
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ISAHAYA ELECTRONICS CORPORATION
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Electrical characteristics(Ta=25℃)
Symbol
Parameter
VCBO
VEBO
VCEO
ICBO
IEBO
hFE
VCE(sat)
R1
fT
Ron
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Output On-resistance
Test conditions
IC=50μA , IE=0mA
IE=50μA , C=0mA
IC=1mA , RBE=∞
VCB=40V , IE=0mA
VEB=40V , IC=0mA
VCE=5V , IC=-10mA
IC=10mA , IB=0.5mA
-
V CE=10V, I E=-10mA, f=100MHz
V I=7V, f=1MHz
RT2N65M
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
Limits
Min Typ Max
40
40
20
0.5
0.5
820 2500
10
7 10 13
35
0.94
Unit
V
V
V
μA
μA
-
mV
KΩ
MHz
Ω
TYPICAL CHARACTERISTICS (Tr1、Tr2)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
100
VCE=0.2V
10 Ta=-40℃
25℃
75℃
1
0.1
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
1000
1000
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
VCE=5V
100
10
0
Ta=-40℃
25℃
75℃
0.2 0.4 0.6 0.8
INPUT OFF VOLTAGE VI(OFF) (V)
1
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ISAHAYA ELECTRONICS CORPORATION
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RT2N65M
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
10000
1000
100
10
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
75℃
VCE=5V
25℃
Ta=-40℃
1
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
1000
1000
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
IC/IB=20
100 75℃
10
1
0.1
0.1
25℃
Ta=-40℃
1 10 100
COLLECTOR CURRENT IC (mA)
1000
10000
1000
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
75℃ VEC=5V
100 25℃
Ta=-40℃
10
1
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
1000
ON RESISTANCE VS. INPUT VOLTAGE
100
f=1kHz
RL=1kΩ
Ta=-40℃
10
25℃
75℃
1
0.1
0.1
1 10
INPUT VOLTAGE VI(V)
100
www.DataSheet4U.com
ISAHAYA ELECTRONICS CORPORATION
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Номер в каталоге | Описание | Производители |
RT2N65M | COMPOUND TRANSISTOR | Isahaya Electronics Corporation |
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