DataSheet26.com

C5516 PDF даташит

Спецификация C5516 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC5516».

Детали детали

Номер произв C5516
Описание NPN Transistor - 2SC5516
Производители Panasonic
логотип Panasonic логотип 

2 Pages
scroll

No Preview Available !

C5516 Даташит, Описание, Даташиты
Power Transistors
2SC5516www.DataSheet4U.com
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1500
1500
600
5
30
20
8
70
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.5A
IC = 10A, IB = 2.5A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 10A, IB1 = 2.5A, IB2 = –5.0A
min typ max Unit
50 µA
1 mA
50 µA
5 10
3V
1.5 V
3 MHz
2.7 µs
0.2 µs
1









No Preview Available !

C5516 Даташит, Описание, Даташиты
Power Transistors
www.DataSheet4U.coPmC — Ta
100
90
80
(1)
70
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
60
50
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Area of safe operation, horizontal operation ASO
35
f=64kHz, TC<90˚C
Area of safe operation with
30 respect to the single pulse
overload curve at the time of
switching ON, shutting down
25 by the high voltage spark,
holding down and like that,
during horizontal operation.
20
15
10
5
<1mA
0
0 500 1000 1500 2000
Collector to emitter voltage VCE (V)
2SC5516
2










Скачать PDF:

[ C5516.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C5511NPN Transistor - 2SC5511ROHM Semiconductor
ROHM Semiconductor
C5516NPN Transistor - 2SC5516Panasonic
Panasonic
C551E C-551EPara Light Electronics
Para Light Electronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск