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PDF LPV521 Data sheet ( Hoja de datos )
| Número de pieza | LPV521 | |
| Descripción | Operational Amplifier | |
| Fabricantes | National Semiconductor Corporation | |
| Logotipo |  |
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LPV521
August 24, 2009
Nanopower, 1.8V, RRIO, CMOS Input, Operational
Amplifier
General Description
The LPV521 is a single nanopower 552 nW amplifier de-
signed for ultra long life battery applications. The operating
voltage range of 1.6V to 5.5V coupled with typically 351 nA of
supply current make it well suited for RFID readers and re-
mote sensor nanopower applications. The device has input
common mode voltage 0.1V over the rails, guaranteed
TCVOS and voltage swing to the rail output performance. The
LPV521 has a carefully designed CMOS input stage that out-
performs competitors with typically 40 fA IBIAS currents. This
low input current significantly reduces IBIAS and IOS errors in-
troduced in megohm resistance, high impedance photodiode,
and charge sense situations. The LPV521 is a member of the
PowerWise® family and has an exceptional power-to-perfor-
mance ratio.
The wide input common mode voltage range, guaranteed 1
mV VOS and 3.5 µV/°C TCVOS enables accurate and stable
measurement for both high side and low side current sensing.
EMI protection was designed into the device to reduce sen-
sitivity to unwanted RF signals from cell phones or other RFID
readers.
The LPV521 is offered in the 5-pin SC-70 package.
Features
(For VS = 5V, Typical unless otherwise noted)
■ Supply current at VCM = 0.3V
400 nA (max)
■ Operating voltage range
1.6V to 5.5V
■ Low TCVOS
3.5 µV/°C (max)
■ VOS
1 mV (max)
■ Input bias current
40 fA
■ PSRR
109 dB
■ CMRR
102 dB
■ Open loop gain
132 dB
■ Gain bandwidth product
6.2 kHz
■ Slew rate
2.4 V/ms
■ Input voltage noise at f = 100 Hz
255 nV/√Hz
■ Temperature range
−40°C to 125°C
Applications
■ Wireless remote sensors
■ Powerline monitoring
■ Power meters
■ Battery powered industrial sensors
■ Micropower oxygen sensor and gas sensor
■ Active RFID readers
■ Zigbee based sensors for HVAC control
■ Sensor network powered by energy scavenging
Typical Application
30054578
© 2009 National Semiconductor Corporation 300545
30054577
www.national.com
1 page  
Symbol
Parameter
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IO Output Current (Note 7)
IS Supply Current
Conditions
Sourcing, VO to V−
VIN(diff) = 100 mV
Sinking, VO to V+
VIN(diff) = −100 mV
VCM = 0.3V
VCM = 4.7V
Min
(Note 6)
15
8
15
8
Typ
(Note 5)
23
22
351
475
Max
(Note 6)
400
620
600
870
Units
mA
nA
5V AC Electrical Characteristics (Note 4)
Unless otherwise specified, all limits guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL > 1MΩ. Boldface limits
apply at the temperature extremes.
Symbol
Parameter
Conditions
Min Typ Max
(Note 6) (Note 5) (Note 6)
Units
GBW
SR
Gain-Bandwidth Product
Slew Rate
CL = 20 pF, RL = 100 kΩ
AV = +1,
VIN = 0V to 5V
Falling Edge
Rising Edge
1.1
1.2
1.1
1.2
6.2
2.7
2.4
kHz
V/ms
θ m Phase Margin
CL = 20 pF, RL = 100 kΩ
Gm Gain Margin
CL = 20 pF, RL = 100 kΩ
en Input-Referred Voltage Noise Density f = 100 Hz
73 deg
20 dB
255 nV/
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
in
Input-Referred Current Noise
f = 100 Hz
22 μVPP
100 fA/
EMIRR
EMI Rejection Ratio, IN+ and IN−
(Note 8)
VRF_PEAK = 100 mVP (−20 dBP),
f = 400 MHz
121
VRF_PEAK = 100 mVP (−20 dBP),
f = 900 MHz
VRF_PEAK = 100 mVP (−20 dBP),
f = 1800 MHz
121
124
dB
VRF_PEAK = 100 mVP (−20 dBP),
f = 2400 MHz
142
Note 1: Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate conditions for which the device is intended to
be functional, but specific performance is not guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ >
TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
Note 5: Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend
on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: All limits are guaranteed by testing, statistical analysis or design.
Note 7: The short circuit test is a momentary open loop test.
Note 8: The EMI Rejection Ratio is defined as EMIRR = 20log (VRF_PEAK/ΔVOS).
Note 9: The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
5 www.national.com
5 Page 
www.DataSheeSt4oUu.rccoimng Current vs. Output Voltage
Sinking Current vs. Output Voltage
30054510
Sourcing Current vs. Output Voltage
30054511
Sinking Current vs. Output Voltage
30054552
Sourcing Current vs. Supply Voltage
30054553
Sinking Current vs. Supply Voltage
30054548
11
30054549
www.national.com
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet LPV521.PDF ] | |
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