STK32N4LLH5 Datasheet PDF - STMicroelectronics
| Part Number | STK32N4LLH5 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
|
|
There is a preview and STK32N4LLH5 download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
Preview 1 page No Preview Available !
www.DataSheet4U.com
Features
STK32N4LLH5
N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK®
STripFET™ V Power MOSFET
Preliminary Data
Type
VDSS RDS(on) max RDS(on)*Qg
STK32N4LLH5 40 V < 0.0025 Ω 106.4nC*mΩ
■ Ultra low top and bottom junction to case
thermal resistance
■ Extremely low on-resistance RDS(on)
■ RDS(on)*Qg industry benchmark
■ High avalanche ruggedness
■ Fully encapsulated die
■ 100% Matte tin finish (in compliance with the
2002/95/EC european directive)
■ PolarPAK® is a trademark of VISHAY
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PolarPAK®
Figure 1. Internal schematic diagram
Bottom View
Top View
Table 1. Device summary
Order code
STK32N4LLH5
Marking
324L5
Package
PolarPAK®
Packaging
Tape and reel
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
|
| |
 
www.DataSShTeeKt43U2.Nco4mLLH5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 15 V, ID= 16 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
ns
ns
TBD
TBD
ns
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD= 16 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 32 A, di/dt = 100 A/µs,
VDD=20 V, TJ=150°C
(see Figure 7)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
32 A
128 A
1.1 V
TBD
TBD
TBD
ns
nC
A
5/13
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STK32N4LLH5 electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STK32N4LLH5.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| STK32N4LLH5 | The function is Power MOSFET ( Transistor ). STMicroelectronics | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
STK3
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||