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PDF EIC7179-12 Data sheet ( Hoja de datos )
| Número de pieza | EIC7179-12 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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ISSUED 02/29/2008
EIC7179-12
7.10-7.90 GHz 12-Watt Internally Matched Power FET
FEATURES
• 7.10– 7.90GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41.5 dBm Output Power at 1dB Compression
• 9.0 dB Power Gain at 1dB Compression
• 38% Power Added Efficiency
• -47 dBc IM3 at PO = 28.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC7179-12
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 7.10-7.90GHz
VDS = 10 V, IDSQ ≈ 3250mA
Gain at 1dB Compression
f = 7.10-7.90GHz
VDS = 10 V, IDSQ ≈ 3250mA
Gain Flatness
f = 7.10-7.90GHz
VDS = 10 V, IDSQ ≈ 3250mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 7.10-7.90GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 7.90GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 62 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
40.5
8.0
TYP
41.5
9.0
38
3500
MAX
±0.6
4150
UNITS
dBm
dB
dB
%
mA
-45 -47
dBc
6500
7900
mA
-2.5 -4.0
V
2.3 2.8 oC/W
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
15
-5
129.6mA
-21.6mA
37dBm
175 oC
-65 to +175 oC
54W
10V
-4V
43.2mA
-7.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
54W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised February 2008
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EIC7179-12.PDF ] | |
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