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LF444 PDF даташит

Спецификация LF444 изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Quad Low Power JFET Input Operational Amplifier».

Детали детали

Номер произв LF444
Описание Quad Low Power JFET Input Operational Amplifier
Производители National Semiconductor
логотип National Semiconductor логотип 

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LF444 Даташит, Описание, Даташиты
May 1998
LF444
Quad Low Power JFET Input Operational Amplifier
General Description
The LF444 quad low power operational amplifier provides
many of the same AC characteristics as the industry stan-
dard LM148 while greatly improving the DC characteristics
of the LM148. The amplifier has the same bandwidth, slew
rate, and gain (10 kload) as the LM148 and only draws
one fourth the supply current of the LM148. In addition the
well matched high voltage JFET input devices of the LF444
reduce the input bias and offset currents by a factor of
10,000 over the LM148. The LF444 also has a very low
equivalent input noise voltage for a low power amplifier.
The LF444 is pin compatible with the LM148 allowing an im-
mediate 4 times reduction in power drain in many applica-
tions. The LF444 should be used wherever low power dissi-
pation and good electrical characteristics are the major
considerations.
Features
n 14 supply current of a LM148: 200 µA/Amplifier (max)
n Low input bias current: 50 pA (max)
n High gain bandwidth: 1 MHz
n High slew rate: 1 V/µs
n Low noise voltage for low power
n Low input noise current
n High input impedance: 1012
n High gain VO = ±10V, RL = 10k: 50k (min)
Simplified Schematic
1/4 Quad
Connection Diagram
Dual-In-Line Package
Ordering Information
LF444XYZ
X indicates electrical grade
Y indicates temperature range
“M” for military, “C” for commercial
Z indicates package type “D”, “M” or “N”
DS009156-1
DS009156-2
Top View
Order Number LF444AMD, LF444CM,
LF444ACN, LF444CN or LF444MD/883
See NS Package Number D14E, M14A or N14A
BI-FETand BI-FET IIare trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS009156
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LF444 Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 11)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 1)
Output Short Circuit
Duration (Note 2)
LF444A
±22V
±38V
±19V
LF444
±18V
±30V
±15V
Continuous Continuous
Power Dissipation
(Notes 3, 9)
Tj max
θjA (Typical)
D Package
900 mW
150˚C
100˚C/W
N, M Packages
670 mW
115˚C
85˚C/W
LF444A/LF444
Operating Temperature Range
(Note 4)
Storage Temperature Range
ESD Tolerance (Note 10)
−65˚C TA 150˚C
Rating to
be determined
Soldering Information
Dual-In-Line Packages
(Soldering, 10 sec.)
260˚C
Small Outline Package
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
DC Electrical Characteristics (Note 5)
Symbol
Parameter
VOS Input Offset Voltage
VOS/T
IOS
Average TC of Input
Offset Voltage
Input Offset Current
IB Input Bias Current
RIN
AVOL
Input Resistance
Large Signal Voltage
Gain
VO
VCM
CMRR
PSRR
IS
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Conditions
RS = 10k, TA = 25˚C
0˚C TA +70˚C
−55˚C TA +125˚C
RS = 10 k
VS = ±15V
Tj = 25˚C
(Notes 5, 6)
Tj = 70˚C
Tj = 125˚C
VS = ±15V
Tj = 25˚C
(Notes 5, 6)
Tj = 70˚C
Tj = 125˚C
Tj = 25˚C
VS = ±15V, VO = ±10V
RL = 10 k, TA = 25˚C
Over Temperature
VS = ±15V, RL = 10 k
RS 10 k
(Note 7)
LF444A
Min Typ Max
25
6.5
8
10
LF444
Min Typ Max
3 10
12
10
Units
mV
mV
mV
µV/˚C
5 25
5 50 pA
1.5 1.5 nA
10 nA
10 50
10 100 pA
3 3 nA
20 nA
1012
1012
50 100
25 100
V/mV
25
±12 ±13
±16 +18
−17
80 100
15
±12 ±13
±11 +14
−12
70 95
V/mV
V
V
V
dB
80 100
70 90
dB
0.6 0.8
0.6 1.0 mA
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LF444 Даташит, Описание, Даташиты
AC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
SR
GBW
en
Amplifier-to-Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
VS = ±15V, TA = 25˚C
VS = ±15V, TA = 25˚C
TA = 25˚C, RS = 100,
LF444A
Min Typ Max
−120
1
1
35
LF444
Min Typ Max
−120
1
1
35
f = 1 kHz
in
Equivalent Input Noise Current
TA = 25˚C, f = 1 kHz
0.01
0.01
Units
dB
V/µs
MHz
Note 1: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 2: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA.
Note 4: The LF444A is available in both the commercial temperature range 0˚C TA 70˚C and the military temperature range −55˚C TA 125˚C. The LF444 is
available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A “C”
indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only.
Note 5: Unless otherwise specified the specifications apply over the full temperature range and for VS = ±20V for the LF444A and for VS = ±15V for the LF444. VOS,
IB, and IOS are measured at VCM = 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, PD. Tj = TA + θjAPD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
±15V to ±5V for the LF444 and from ±20V to ±5V for the LF444A.
Note 8: Refer to RETS444X for LF444MD military specifications.
Note 9: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Note 10: Human body model, 1.5 kin series with 100 pF.
Note 11: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
Supply Current
DS009156-12
DS009156-13
3
DS009156-14
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