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LF442 PDF даташит

Спецификация LF442 изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Dual Low Power JFET Input Operational Amplifier».

Детали детали

Номер произв LF442
Описание Dual Low Power JFET Input Operational Amplifier
Производители National Semiconductor
логотип National Semiconductor логотип 

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LF442 Даташит, Описание, Даташиты
April 1999
LF442
Dual Low Power JFET Input Operational Amplifier
General Description
The LF442 dual low power operational amplifiers provide
many of the same AC characteristics as the industry stan-
dard LM1458 while greatly improving the DC characteristics
of the LM1458. The amplifiers have the same bandwidth,
slew rate, and gain (10 kload) as the LM1458 and only
draw one tenth the supply current of the LM1458. In addition
the well matched high voltage JFET input devices of the
LF442 reduce the input bias and offset currents by a factor of
10,000 over the LM1458. A combination of careful layout de-
sign and internal trimming guarantees very low input offset
voltage and voltage drift. The LF442 also has a very low
equivalent input noise voltage for a low power amplifier.
The LF442 is pin compatible with the LM1458 allowing an
immediate 10 times reduction in power drain in many appli-
cations. The LF442 should be used where low power dissi-
pation and good electrical characteristics are the major con-
siderations.
Features
n 1/10 supply current of a LM1458: 400 µA (max)
n Low input bias current: 50 pA (max)
n Low input offset voltage: 1 mV (max)
n Low input offset voltage drift: 10 µV/˚C (max)
n High gain bandwidth: 1 MHz
n High slew rate: 1 V/µs
n Low noise voltage for low power:
n Low input noise current:
n High input impedance: 1012
n High gain VO = ±10V, RL = 10k: 50k (min)
Typical Connection
Connection Diagrams
Metal Can Package
DS009155-1
Ordering Information
LF442XYZ
X indicates electrical grade
Y indicates temperature range
“M” for military
“C” for commercial
Z indicates package type
“H” or “N”
BI-FET IIis a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS009155
DS009155-2
Pin 4 connected to case
Top View
Order Number LF442AMH or LF442MH
or LF442MH/883
See NS Package Number H08A
Dual-In-Line Package
DS009155-4
Top View
Order Number LF442ACN or LF442CN
See NS Package Number N08E
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LF442 Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 2)
Output Short Circuit
Duration (Note 3)
LF442A
±22V
±38V
±19V
LF442
±18V
±30V
±15V
Continuous Continuous
Tj max
H Package
150˚C
N Package
115˚C
θJA (Typical)
(Note 4)
(Note 5)
θJC (Typical)
Operating Temperature
Range
Storage
Temperature Range
Lead Temperature
(Soldering, 10 sec.)
ESD Tolerance
H Package
65˚C/W
165˚C/W
21˚C/W
(Note 5)
N Package
114˚C/W
152˚C/W
(Note 5)
−65˚CTA150˚C −65˚CTA150˚C
260˚C
260˚C
Rating to be determined
DC Electrical Characteristics (Note 7)
Symbol
Parameter
Conditions
VOS Input Offset Voltage
VOS/T
IOS
Average TC of Input
Offset Voltage
Input Offset Current
IB Input Bias Current
RIN
AVOL
Input Resistance
Large Signal Voltage
Gain
VO
VCM
CMRR
PSRR
IS
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
RS = 10 k, TA = 25˚C
Over Temperature
RS = 10 k
VS = ±15V
Tj = 25˚C
(Notes 7, 8)
Tj = 70˚C
Tj = 125˚C
VS = ±15V
Tj = 25˚C
(Notes 7, 8)
Tj = 70˚C
Tj = 125˚C
Tj = 25˚C
VS = ±15V, VO = ±10V,
RL = 10 k, TA = 25˚C
Over Temperature
VS = ±15V, RL = 10 k
RS 10 k
(Note 9)
LF442A
Min Typ Max
0.5 1.0
7 10
LF442
Min Typ Max
1.0 5.0
7.5
7
Units
mV
mV
µV/˚C
5 25
5 50 pA
1.5 1.5 nA
10 nA
10 50
10 100 pA
3 3 nA
20 nA
1012
1012
50 200
25 200
V/mV
25 200
±12 ±13
±16 +18
−17
80 100
15 200
±12 ±13
±11 +14
−12
70 95
V/mV
V
V
V
dB
80 100
70 90
dB
300 400
400 500 µA
AC Electrical Characteristics (Note 7)
Symbol
Parameter
Conditions
SR
GBW
en
in
Amplifier to Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
TA = 25˚C, f = 1 Hz-20 kHz
(Input Referred)
VS = ±15V, TA = 25˚C
VS = ±15V, TA = 25˚C
TA = 25˚C, RS = 100,
f = 1 kHz
TA = 25˚C, f = 1 kHz
LF442A
Min Typ Max
−120
LF442
Min Typ Max
−120
Units
dB
0.8 1
0.8 1
35
0.6 1
0.6 1
35
V/µs
MHz
0.01
0.01
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LF442 Даташит, Описание, Даташиты
AC Electrical Characteristics (Note 7) (Continued)
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 4: The value given is in 400 linear feet/min air flow.
Note 5: The value given is in static air.
Note 6: These devices are available in both the commercial temperature range 0˚C TA 70˚C and the military temperature range −55˚C TA 125˚C. The tem-
perature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indi-
cates the military temperature range. The military temperature range is available in “H” package only.
Note 7: Unless otherwise specified, the specifications apply over the full temperature range and for VS = ±20V for the LF442A and for VS = ±15V for the LF442.
VOS, IB, and IOS are measured at VCM = 0.
Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, PD. Tj = TA + θjAPD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
±15V to ±5V for the LF442 and ±20V to ±5V for the LF442A.
Note 10: Refer to RETS442X for LF442MH military specifications.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
Supply Current
DS009155-17
Positive Common-Mode
Input Voltage Limit
DS009155-18
Negative Common-Mode
Input Voltage Limit
DS009155-19
Positive Current Limit
DS009155-20
DS009155-21
DS009155-22
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