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PDF MRFE6S9045NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S9045NR1 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large - signal, common - source amplifier applications
in 28 volt base station equipment.
•
Typical Single - Carrier N
ITDrQaff=ic3C50odmeAs ,8PTohutro=u1g0h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts,
13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• TPyopuPtico=awl1eG6rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(9V2o0lt-s9, 6ID0QM=H3z5)0 mA,
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance:
Full Frequency Band (920 -
9V6D0DM=H2z8)
Volts,
IDQ
=
350
mA,
Pout
=
45
Watts,
Power Gain — 20 dB
Drain Efficiency — 68%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9045N
Rev. 0, 10/2007
MRFE6S9045NR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
°C/W
1.0
1.1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
1
1 page  
www.DataSheet4U.com C15
R2
R1
VGG
R3
B1
C7
L1 C5
C1 C2 C4
C3 C6
C18
VDD
C16 C17
B2
C10
L2
C8
C11
C9
C12
C13
C14
TO−270/272
Surface /
Bolt down
Figure 2. MRFE6S9045NR1 Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
5
5 Page 
www.DataSheet4U.com
PACKAGE DIMENSIONS
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MRFE6S9045NR1.PDF ] | |
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