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LF411CN PDF даташит

Спецификация LF411CN изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Low Offset/ Low Drift JFET Input Operational Amplifier».

Детали детали

Номер произв LF411CN
Описание Low Offset/ Low Drift JFET Input Operational Amplifier
Производители National Semiconductor
логотип National Semiconductor логотип 

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LF411CN Даташит, Описание, Даташиты
April 1998
LF411
Low Offset, Low Drift JFET Input Operational Amplifier
General Description
These devices are low cost, high speed, JFET input opera-
tional amplifiers with very low input offset voltage and guar-
anteed input offset voltage drift. They require low supply cur-
rent yet maintain a large gain bandwidth product and fast
slew rate. In addition, well matched high voltage JFET input
devices provide very low input bias and offset currents. The
LF411 is pin compatible with the standard LM741 allowing
designers to immediately upgrade the overall performance of
existing designs.
These amplifiers may be used in applications such as high
speed integrators, fast D/A converters, sample and hold cir-
cuits and many other circuits requiring low input offset volt-
age and drift, low input bias current, high input impedance,
high slew rate and wide bandwidth.
Features
n Internally trimmed offset voltage: 0.5 mV(max)
n Input offset voltage drift: 10 µV/˚C(max)
n Low input bias current: 50 pA
n Low input noise current:
n Wide gain bandwidth: 3 MHz(min)
n High slew rate: 10V/µs(min)
n Low supply current: 1.8 mA
n High input impedance: 1012
n Low total harmonic distortion AV=10,
RL=10k, VO=20 Vp-p, BW=20 Hz−20 kHz: <0.02%
n Low 1/f noise corner: 50 Hz
n Fast settling time to 0.01%: 2 µs
Typical Connection
Connection Diagrams
Metal Can Package
Ordering Information
LF411XYZ
X indicates electrical grade
Y indicates temperature range
“M” for military
“C” for commercial
Z indicates package type
“H” or “N”
DS005655-1
DS005655-5
Note: Pin 4 connected to case.
Top View
Order Number LF411ACH
or LF411MH/883 (Note 1)
See NS Package Number H08A
Dual-In-Line Package
DS005655-7
Top View
Order Number LF411ACN,
LF411CN or LF411MJ/883 (Note 1)
See NS Package Number N08E or J08A
BI-FET IIis a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS005655
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LF411CN Даташит, Описание, Даташиты
Simplified Schematic
Note 1: Available per JM38510/11904
DS005655-6
www.national.com
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LF411CN Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 3)
Output Short Circuit
Duration
LF411A
±22V
±38V
LF411
±18V
±30V
±19V
±15V
Continuous Continuous
Power Dissipation
(Notes 4, 11)
H Package
670 mW
N Package
670 mW
Tjmax
θjA
θjC
Operating Temp.
Range
Storage Temp.
Range
Lead Temp.
(Soldering,
10 sec.)
ESD Tolerance
H Package
150˚C
162˚C/W (Still Air)
65˚C/W (400 LF/min
Air Flow)
20˚C/W
N Package
115˚C
120˚C/W
(Note 5)
(Note 5)
−65˚CTA150˚C −65˚CTA150˚C
260˚C
260˚C
Rating to be determined.
DC Electrical Characteristics (Note 6)
Symbol
Parameter
VOS
VOS/T
IOS
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
IB Input Bias Current
RIN
AVOL
Input Resistance
Large Signal Voltage
Gain
VO
VCM
CMRR
PSRR
IS
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Conditions
RS=10 k, TA=25˚C
RS=10 k(Note 7)
VS = ±15V
Tj=25˚C
(Notes 6, 8)
Tj=70˚C
Tj=125˚C
VS = ±15V
Tj=25˚C
(Notes 6, 8)
Tj=70˚C
Tj=125˚C
Tj=25˚C
VS=±15V, VO=±10V,
RL=2k, TA=25˚C
Over Temperature
VS=±15V, RL=10k
RS10k
LF411A
Min Typ Max
0.3 0.5
7 10
Min
25 100
2
25
50 200
4
50
1012
50 200
25
25 200
±12 ±13.5
±16 +19.5
−16.5
80 100
15
±12
±11
70
LF411
Typ Max
0.8 2.0
7 20
(Note 7)
25 100
2
25
50 200
4
50
1012
200
200
±13.5
+14.5
−11.5
100
Units
mV
µV/˚C
pA
nA
nA
pA
nA
nA
V/mV
V/mV
V
V
V
dB
(Note 9)
80 100
70 100
dB
1.8 2.8
1.8 3.4 mA
AC Electrical Characteristic (Note 6)
Symbol
Parameter
Conditions
SR
GBW
en
in
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
VS=±15V, TA=25˚C
VS=±15V, TA=25˚C
TA=25˚C, RS=100,
f=1 kHz
TA=25˚C, f=1 kHz
LF411A
Min Typ Max
10 15
34
LF411
Min Typ Max
8 15
2.7 4
25 25
0.01 0.01
Units
V/µs
MHz
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
3 www.national.com










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