|
|
PDF MRF5S21045MR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S21045MR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF5S21045MR1 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S21045
Rev. 1, 7/2005
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +15
130
0.74
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 45
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.35
1.48
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved. MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
15.2 32
15 ηD
28
14.8 24
14.6 VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 20
Gps 2−Carrier W−CDMA, 10 MHz Carrier Spacing,
14.4 3.84 MHz Channel Bandwidth 16
14.2 PAR = 8.5 dB @ 0.01%
IRL Probability (CCDF)
14
− 28
− 32
− 10
− 13
13.8 −36
IM3
13.6
− 40
13.4 ACPR
− 44
2060 2080 2100 2120 2140 2160 2180 2200 2220
− 16
− 19
− 22
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts
14.8 46
14.6
14.4 ηD
42
38
14.2 34
Gps VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
14
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
30
13.8
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
− 18
13.6 IRL
− 22
−8
− 11
13.4 −26
IM3
13.2
− 30
ACPR
13
− 34
2060 2080 2100 2120 2140 2160 2180 2200 2220
− 14
− 17
− 20
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts
17
IDQ = 800 mA
16
650 mA
15 500 mA
14 350 mA
13 200 mA
12 VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
11
1 10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
− 20
IDQ = 200 mA
− 30
800 mA
− 40
650 mA
500 mA
−50 350 mA
VDD = 28 Vdc
−60 f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
5
5 Page 
www.DataSheet4U.com2X r1
E1 B
aaa M C A B
A
E2
GATE LEAD
D1
4X b1
aaa M C A
DRAIN LEAD
D D2
4X
e
3
4
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
PIN 5
NOTE 8
1
2
c1
H
DATUM
PLANE
F
ZONE J
A1
A2
7
Y
E
A
E3
Y
C
SEATING
PLANE
E3
VIEW Y - Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
CASE 1484 - 02
5. SOURCE
ISSUE B
TO - 272 WB - 4
MRF5S21045NBR1(MBR1)
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1 .810 BSC
20.57 BSC
D2 .600 − − − 15.24 − − −
E .551 .559
14 14.2
E1 .353 .357 8.97 9.07
E2 .270 − − − 6.86 − − −
E3 .346 .350 8.79 8.89
F .025 BSC
0.64 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
e .106 BSC
2.69 BSC
aaa .004
.10
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF5S21045MR1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF5S21045MR1 | RF Power Field Effect Transistors | Freescale Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |