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G4BC20F PDF даташит

Спецификация G4BC20F изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «IRG4BC20F».

Детали детали

Номер произв G4BC20F
Описание IRG4BC20F
Производители International Rectifier
логотип International Rectifier логотип 

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G4BC20F Даташит, Описание, Даташиты
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PD - 91602A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20F
Fast Speed IGBT
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-220AB
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000









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G4BC20F Даташит, Описание, Даташиты
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IRG4BC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
2.9
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.72 V/°C VGE = 0V, IC = 1.0mA
1.66 2.0
IC = 9.0A
VGE = 15V
2.06 V IC = 16A
See Fig.2, 5
1.76
IC = 9.0A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
5.1 S VCE = 100V, IC = 9.0A
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
27
4.2
9.9
24
17
190
210
0.07
0.60
0.67
24
17
300
340
1.30
7.5
540
37
7.0
Max.
40
6.2
15
280
320
1.1
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 9.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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G4BC20F Даташит, Описание, Даташиты
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IRG4BC20F
25
20
15
S q u a re w a ve :
60% of rated
v oltage
10
I
5
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specifie d
Pow er D is sipa tion = 13 W
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
T ria ngu lar w ave :
I
C lamp voltage:
80% of rated
A
100
100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3










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