G4BC20F PDF даташит
Спецификация G4BC20F изготовлена «International Rectifier» и имеет функцию, называемую «IRG4BC20F». |
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Детали детали
Номер произв | G4BC20F |
Описание | IRG4BC20F |
Производители | International Rectifier |
логотип |
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PD - 91602A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-220AB
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000
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IRG4BC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
2.9
—
—
—
—
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.72 — V/°C VGE = 0V, IC = 1.0mA
1.66 2.0
IC = 9.0A
VGE = 15V
2.06 — V IC = 16A
See Fig.2, 5
1.76 —
IC = 9.0A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-11 — mV/°C VCE = VGE, IC = 250µA
5.1 — S VCE = 100V, IC = 9.0A
— 250 µA VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
27
4.2
9.9
24
17
190
210
0.07
0.60
0.67
24
17
300
340
1.30
7.5
540
37
7.0
Max.
40
6.2
15
—
—
280
320
—
—
1.1
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 9.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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IRG4BC20F
25
20
15
S q u a re w a ve :
60% of rated
v oltage
10
I
5
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specifie d
Pow er D is sipa tion = 13 W
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
T ria ngu lar w ave :
I
C lamp voltage:
80% of rated
A
100
100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
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