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C4159 PDF даташит

Спецификация C4159 изготовлена ​​​​«Hamamatsu Corporation» и имеет функцию, называемую «Low noise amplifier».

Детали детали

Номер произв C4159
Описание Low noise amplifier
Производители Hamamatsu Corporation
логотип Hamamatsu Corporation логотип 

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C4159 Даташит, Описание, Даташиты
INFRARED DETECTOR
www.DataSheet4U.com
Amplifier for infrared detector
C4159/C5185 series, C3757-02
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
Accessories
l Instruction manual
l 4-conductor cable (with a connector; 2 m) A4372-02
s Absolute m axim um ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
Value
0 to +40
-20 to +70
Unit
°C
°C
s Amplifiers for photovoltaic detectors (Typ.)
Parameter
C4159-01
C4159-04
C4159-05
C4159-02
Applicable detector
InSb (dewer type) *1 InSb (dewer type) *1
(φ0.6 mm, 1 mm) (φ2 mm)
InAs
(P7163)
InGaAs
Conversion impedance
108, 107, 106 2 × 107, 2 × 106, 2 × 105 108, 107, 106 250 to 5 × 103
(3 ranges switchable) (3 ranges switchable) (3 ranges switchable) continuous
Frequency response (amp. only, -3 dB) DC to 100 k
DC to 45 k
DC to 15 k
20 to 120 M
Output impedance
50 50 50 50
Maximu m output voltage (1 kload)
+10
+10
+10
±1.3
Output offset voltage
±5 ±5 ±10 ±30
Equivalent input noise current (f=1 kHz)
0.15 *2
0.55
0.15 (108, 107 range)
0.65 (106 range)
30
Reverse voltage
Im p os sib le
Internally
generated
External power supply
±15 ±15
Current consumption *3
+30, -10 Max.
+90, -60 Max.
Note) Output nose voltage = Equivalent input noise current × Conversion impedance
C4159-03
InGaAs
107, 106, 105
(3 ranges switchable)
DC to 15 k
50
+10
±5
2.5
Can be applied
from external unit
±15
±15 Max.
Unit
-
V/A
Hz
V
mV
pA/Hz1/2
-
V
mA
s Amplifiers for photoconductive detectors (Typ.)
Parameter
C5185
C5185-01
Applicable detector
MCT (dewar type),
InSb (P6606 series)
MCT
(P3981/P2750 series) *4
Input impedance 5 5
Voltage gain
66 (× 2000)
66 (× 2000)
Frequency response (amp. only, -3 dB)
5 to 250 k
5 to 250 k
Detector bias current
5 mA, 10 mA, 15 mA
(3 ranges switchable)
0.1 mA, 0.5 mA, 1 mA
(3 ranges switchable)
Output impedance
50
50
Maximu m output voltage (1 kload)
±2.5
±2.5
Equivalent input noise voltage (f=1 kHz)
2.6
1.2
External power supply
±15
±15
Current consumption *3
+60, -10 Max.
+60, -10 Max.
Note) Output noise voltage = Equivalent input noise voltage × Voltage gain
*1: Amplifiers for multi-element detectors are separately provided.
*2: 0.65 pA/Hz1/2 when conversion impedance is set to 106 V/A
*3: Recommended DC power supply (analog power supply): ±15 V
Current capacity: More than 1.5 times the maximum current consumption
Ripple noise: 6 mVp-p or less
*4: Preamp for P3257-30/-31 available upon request
C3757-02
PbS, PbSe
10000
40 (× 100)
0.2 to 10 k
Internal bias
50
±10
40
±15
+15, -15 Max.
Unit
-
k
dB
Hz
-
V
nV/Hz1/2
V
mA
1









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C4159 Даташит, Описание, Даташиты
Amplifier for infrared detector C4159/C5185 series, C3757-02
www.DataSheet4U.com
s Dimensional outlines (unit: mm)
C4159-01/-03/-04/-05
C4159-02
4-PIN CONNECTOR
4-PIN CONNECTOR
PREAMPLIFIER
POWER
HIGH
MID
IN LOW
OUT
OFFSET VOLTAGE
ADJUSTING SCREW
85
GAIN ADJUSTING SCREW
BNC CONNECTOR
BNC
GAIN ADJUSTING SCREW
PREAMPLIFIER
POWER
IN
OUT
85
BNC CONNECTOR
KIRDA0046EA
C5185/-01
4-PIN CONNECTOR
BNC
PREAMPLIFIER
POWER
HIGH
MID
IN LOW
OUT
85
BIAS ADJUSTING SCREW
BNC CONNECTOR
KIRDA0048EB
C3757-02
KIRDA0047EA
4-PIN CONNECTOR
PREAMPLIFIER
POWER
IN
OUT
85
BNC CONNECTOR
KIRDA0049EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1011E07
2 Nov. 2005 DN










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