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LF147J PDF даташит

Спецификация LF147J изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Wide Bandwidth Quad JFET Input Operational Amplifiers».

Детали детали

Номер произв LF147J
Описание Wide Bandwidth Quad JFET Input Operational Amplifiers
Производители National Semiconductor
логотип National Semiconductor логотип 

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LF147J Даташит, Описание, Даташиты
May 1999
LF147/LF347
Wide Bandwidth Quad JFET Input Operational Amplifiers
General Description
The LF147 is a low cost, high speed quad JFET input opera-
tional amplifier with an internally trimmed input offset voltage
(BI-FET IItechnology). The device requires a low supply
current and yet maintains a large gain bandwidth product
and a fast slew rate. In addition, well matched high voltage
JFET input devices provide very low input bias and offset
currents. The LF147 is pin compatible with the standard
LM148. This feature allows designers to immediately up-
grade the overall performance of existing LF148 and LM124
designs.
The LF147 may be used in applications such as high speed
integrators, fast D/A converters, sample-and-hold circuits
and many other circuits requiring low input offset voltage,
low input bias current, high input impedance, high slew rate
and wide bandwidth. The device has low noise and offset
voltage drift.
Features
n Internally trimmed offset voltage: 5 mV max
n Low input bias current: 50 pA
n Low input noise current:
n Wide gain bandwidth: 4 MHz
n High slew rate: 13 V/µs
n Low supply current: 7.2 mA
n High input impedance: 1012
n Low total harmonic distortion AV=10,: <0.02%
RL=10k, VO=20 Vp-p, BW=20 Hz−20 kHz
n Low 1/f noise corner: 50 Hz
n Fast settling time to 0.01%: 2 µs
Simplified Schematic
14 Quad
Connection Diagram
Dual-In-Line Package
DS005647-13
DS005647-1
Note 1: Available per SMD #8102306, JM38510/11906.
Top View
Order Number LF147J, LF347M, LF347BN,
LF347N or LF147J/883 (Note 1)
See NS Package Number J14A, M14A or N14A
BI-FET IIis a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS005647
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LF147J Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 3)
Output Short Circuit
Duration (Note 4)
Power Dissipation
(Notes 5, 11)
Tj max
θjA
Ceramic DIP (J) Package
Plastic DIP (N) Package
Surface Mount Narrow (M)
LF147
±22V
±38V
±19V
LF347B/LF347
±18V
±30V
±15V
Continuous Continuous
900 mW
1000 mW
150˚C
150˚C
70˚C/W
75˚C/W
100˚C/W
DC Electrical Characteristics (Note 7)
Symbol
Parameter
Conditions
VOS Input Offset Voltage
VOS/T
IOS
Average TC of Input Offset
Voltage
Input Offset Current
IB Input Bias Current
RIN
AVOL
Input Resistance
Large Signal Voltage Gain
VO
VCM
CMRR
PSRR
IS
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
RS=10 k, TA=25˚C
Over Temperature
RS=10 k
Tj=25˚C, (Notes 7, 8)
Over Temperature
Tj=25˚C, (Notes 7, 8)
Over Temperature
Tj=25˚C
VS=±15V, TA=25˚C
VO=±10V, RL=2 k
Over Temperature
VS=±15V, RL=10 k
VS = ±15V
RS10 k
(Note 9)
Surface Mount Wide (WM)
Operating Temperature
Range
Storage Temperature
Range
Lead Temperature
(Soldering, 10 sec.)
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
LF147
(Note 6)
LF347B/LF347
85˚C/W
(Note 6)
−65˚CTA150˚C
260˚C
260˚C
260˚C
215˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 12)
900V
LF147
LF347B
LF347
Units
Min Typ Max Min Typ Max Min Typ Max
15
35
5 10 mV
8 7 13 mV
10 10 10 µV/˚C
25 100
25 100
25 100 pA
25 4
4 nA
50 200
50 200
50 200 pA
1012
50
1012
8
1012
8
nA
50 100
50 100
25 100
V/mV
25 25 15 V/mV
±12 ±13.5
±12 ±13.5
±12 ±13.5
V
±11 +15
±11 +15
±11 +15
V
−12 −12 −12 V
80 100
80 100
70 100
dB
80 100
80 100
70 100
dB
7.2 11
7.2 11
7.2 11 mA
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LF147J Даташит, Описание, Даташиты
AC Electrical Characteristics (Note 7)
Symbol
Parameter
Conditions
Amplifier to Amplifier Coupling
SR
GBW
en
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
in Equivalent Input Noise Current
TA=25˚C,
f=1 Hz−20 kHz
(Input Referred)
VS=±15V, TA=25˚C
VS=±15V, TA=25˚C
TA=25˚C, RS=100,
f=1000 Hz
Tj=25˚C, f=1000 Hz
LF147
LF347B
LF347
Min Typ Max Min Typ Max Min Typ Max
−120
−120
−120
8 13
2.2 4
20
0.01
8 13
2.2 4
20
0.01
8 13
2.2 4
20
0.01
Units
dB
V/µs
MHz
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA.
Note 6: The LF147 is available in the military temperature range −55˚CTA125˚C, while the LF347B and the LF347 are available in the commercial temperature
range 0˚CTA70˚C. Junction temperature can rise to Tj max = 150˚C.
Note 7: Unless otherwise specified the specifications apply over the full temperature range and for VS=±20V for the LF147 and for VS=±15V for the LF347B/LF347.
VOS, IB, and IOS are measured at VCM=0.
Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
VS = ± 5V to ±15V for the LF347 and LF347B and from VS = ±20V to ±5V for the LF147.
Note 10: Refer to RETS147X for LF147D and LF147J military specifications.
Note 11: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out-
side guaranteed limits.
Note 12: Human body model, 1.5 kin series with 100 pF.
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