MRF6S19120HSR3 PDF даташит
Спецификация MRF6S19120HSR3 изготовлена «Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistors». |
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Детали детали
Номер произв | MRF6S19120HSR3 |
Описание | RF Power Field Effect Transistors |
Производители | Freescale Semiconductor |
логотип |
12 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
• TS10yyp0ni0cc,amPl ASa,ginPingogleu,t-T=Craa1fr9friicWerCaNottds-eCAsDv8Mg.TA, hFPruoelulrgfFohrrem1q3au)necCnech:yaVnBDnaDenld=B,2aIS8nd-V9wo5ildtsCt,hDI=DMQA=(Pilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19120H
Rev. 1, 5/2006
MRF6S19120HR3
MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19120HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
407
2.3
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
RθJC
0.43
0.45
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
1
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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
www.datasheet4u.com
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.7 Adc)
gfs — 6.9 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.95 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 14 15 17 dB
Drain Efficiency
ηD 20 21.5 — %
Adjacent Channel Power Ratio
ACPR
—
- 54 - 48 dBc
Input Return Loss
IRL — - 13 - 9 dB
1. Part is internally matched both on input and output.
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor
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VBIAS
B1
+
R1 C9 C5 C7 R2
RF
INPUT
Z1
Z2
www.datasheet4u.com
C1
Z3
C3
Z4 Z5
DUT
Z6
VSUPPLY
+++++
C4 C6 C8 C10 C11 C12 C13 C14
RF
Z7 Z8 Z9 Z10 OUTPUT
C2
Z1 1.242″ x 0.084″ Microstrip
Z2 0.839″ x 0.084″ Microstrip
Z3 0.230″ x 0.180″ Microstrip
Z4 0.320″ x 1.100″ Microstrip
Z5 0.093″ x 1.100″ Microstrip
Z6 0.160″ x 1.098″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.387″ x 1.098″ Microstrip
0.169″ x 0.316″ Microstrip
0.781″ x 0.084″ Microstrip
1.228″ x 0.084″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Short RF Bead
2743019447
C1, C2
10 pF Chip Capacitors
100B100JP50X
C3, C4
5.1 pF Chip Capacitors
100B5R1CP50X
C5, C6
1.0 nF Chip Capacitors
100B102JP50X
C7, C8
0.1 μF Chip Capacitors
C1825C100J5RAC
C9
10 μF, 35 V Tantalum Chip Capacitor
T491X106K035AS
C10, C11
10 μF, 35 V Tantalum Chip Capacitors
GRM55DR61H106KA88L
C12, C13
22 μF, 50 V Tantalum Chip Capacitors
T491C105K022AS
C14 470 μF, 63 V Electrolytic Capacitor, Radial MCR63V470M8X11
R1
560 KW, 1/4 W Chip Resistor (1206)
CRCW1206560F100
R2
10 W, 1/4 W Chip Resistor (1206)
CRCW1206010F100
Manufacturer
Fair - Rite
ATC
ATC
ATC
Kemet
Kemet
Murata
Kemet
Multicomp
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
3
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MRF6S19120HSR3 | RF Power Field Effect Transistors | Freescale Semiconductor |
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