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PDF MRF6S19100NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S19100NBR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
• TPPyaopugtiicn=agl2,22T-rWCafaafirtctrsiCeArovNdge-.s,CFD8uMTllhAFrroPeueqgruhfeo1nrm3cy)aCnBchaean:ndVn, DeISDl B-=9a52n8dCwVDiodMltthAs,=(IPD1iQ.lo2=t2,89S85y0MncmH, zA.,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S19100N
Rev. 1, 5/2006
MRF6S19100NR1
MRF6S19100NBR1
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
287
1.64
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
RθJC
0.61
0.65
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
1
1 page  
www.datasheet4u.com
TYPICAL CHARACTERISTICS
15.8 27
15.7 ηD
15.6
26.5
26
15.5
Gps
15.4
15.3
15.2
15.1 IM3
15
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
25.5
25
− 30
− 36
− 42
− 48
14.9 ACPR
− 54
14.8 −60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 12
− 16
− 20
− 24
− 28
− 32
− 36
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
15.4 36
15.3 ηD
15.2
15.1 Gps
15
14.9
14.8 IM3
14.7
14.6
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 950 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IRL
35.5
35
34.5
34
− 25
− 30
− 35
− 40
14.5 ACPR
− 45
14.4 −50
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
− 10
− 15
− 20
− 25
− 30
− 35
− 40
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg.
17
16 1190 mA
950 mA
15
710 mA
14
IDQ = 1425 mA
13 475 mA
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
11
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
300
− 10
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
−20 Two−Tone Measurements, 2.5 MHz Tone Spacing
− 30
IDQ = 475 mA
− 40
1425 mA
− 50
710 mA
950 mA
1190 mA
− 60
1
10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
5
5 Page 
www.datasheet4u.com
NOTES
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF6S19100NBR1.PDF ] | |
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